Datasheet > TSP740MR

TSP740MR

更新时间： 2024-11-19 17:15:43

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描述
TO-220

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TSP740MR 数据手册

TSP740MR/TSF740MR

400V N-Channel MOSFET

General Description

Features

- 10.5A, 400V, R_DS(on)typ.= 0.46Ω@V_GS= 10

- Low gate charge ( typical 15.7nC)

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

This Power MOSFET is produced using Truesemi‘s

advanced planar stripe DMOS technology.

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge topology.

TO-220

TO-220F

G D S

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

TSP740MR

Symbol

Parameter

TSF740MR

Units

Drain-Source Voltage

400

V_DSS

Drain Current

- Continuous (T_C= 25℃)

10.5

6.6

10.5 *

I_D

- Continuous (T_C= 100℃)

6.6 *

I_DM

(Note 1)

40 *

Drain Current

- Pulsed

ꢀ

V_GSS

Gate-Source Voltage

±25

360

(Note 2)

(Note 1)

(Note 3)

EAS

I_AR

Single Pulsed Avalanche Energy

Avalanche Current

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25℃)

19.36

4.5

V/ns

dv/dt

193.6

1.55

39.8

0.32

P_D

- Derate above 25℃

W/℃

℃

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

300

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

℃

V_ESD(G-S)

Gate Source ESD (HBM – C = 100pF, R = 1.5KΩ)

2500

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

TSP740MR

TSF740MR

Units

Thermal Resistance, Junction-to-Case

0.65

3.15

℃/W

R_θJC

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

0.5

℃/W

R_θJS

62.5

R_θJA

Ver.B2

www.truesemi.com

12 3 4 5 6 7

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