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TSF10H100C PDF预览

TSF10H100C

更新时间: 2024-09-23 12:19:11
品牌 Logo 应用领域
TSC 高压
页数 文件大小 规格书
3页 189K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

TSF10H100C 数据手册

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creat by ART  
TSF10H100C  
Taiwan Semiconductor  
Dual High-Voltage Trench MOS Barrier Schottky Rectifier  
FEATURES  
- Patented Trench MOS Barrier Schottky technology  
- Excellent high temperature stability  
- Low forward voltage  
- Lower power loss/ High efficiency  
- High forward surge capability  
- Compliant to RoHS directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
- Halogen-free according to IEC 61249-2-21 definition  
ITO-220AB  
MECHANICAL DATA  
Case: ITO-220AB  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 1A whisker test  
Polarity: As marked  
Mounting torque: 5 in-lbs. max.  
Weight: 1.7g  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)  
PARAMETER  
TSF10H100C  
SYMBOL  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
100  
10  
5
V
per device  
per diode  
Maximum average forward rectified  
current  
IF(AV)  
A
A
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
120  
Peak repetitive reverse surge current (Note 1)  
Non-repetitive avalanche energy at L=60mH, per diode  
Voltage rate of change (Rated VR)  
IRRM  
EAS  
0.5  
A
mJ  
V/μs  
V
60  
10000  
dV/dt  
VAC  
Isolation voltage from terminal to heatsink t = 1 min  
1500  
MIN.  
TYP.  
MAX.  
-
V
V
Breakdown voltage ( IR =1.0mA )  
VBR  
VF  
100  
-
TJ = 25°C  
-
-
-
-
-
0.8  
0.7  
100  
6
Instantaneous forward voltage  
per diode ( Note2 )  
IF = 5A  
TJ = 125°C  
TJ = 25°C  
TJ = 100°C  
-
-
μA  
mA  
Instantaneous reverse current per diode at rated  
reverse voltage  
IR  
-
OC/W  
OC  
OC  
Typical thermal resistance (Note 3)  
Operating junction temperature range  
Storage temperature range  
RθJC  
TJ  
4.3  
- 55 to +150  
- 55 to +150  
TSTG  
Note 1: 2.0 μs Pulse width, f=1.0 kHz  
Note 2: Pulse test with pulse width=300 μs, 1% duty cycle  
Note 3: Mount on heatsink size of 4in x 6in x 0.25in Al-plate  
Document Number: DS_D1401020  
Version: C14  

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