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TSD2098ACYRM PDF预览

TSD2098ACYRM

更新时间: 2024-09-15 06:02:23
品牌 Logo 应用领域
TSC 晶体晶体管
页数 文件大小 规格书
4页 197K
描述
Low Vcesat NPN Transistor

TSD2098ACYRM 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.84Is Samacsys:N
最大集电极电流 (IC):5 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):150
JESD-30 代码:R-PSSO-F3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:SINGLE晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

TSD2098ACYRM 数据手册

 浏览型号TSD2098ACYRM的Datasheet PDF文件第2页浏览型号TSD2098ACYRM的Datasheet PDF文件第3页浏览型号TSD2098ACYRM的Datasheet PDF文件第4页 
TSD2098A  
Low Vcesat NPN Transistor  
SOT-89  
Pin Definition:  
1. Base  
PRODUCT SUMMARY  
BVCBO  
BVCEO  
IC  
100V  
2. Collector  
3. Emitter  
20V  
5A  
VCE(SAT)  
0.35V @ IC / IB = 3A / 100mA  
Features  
Ordering Information  
Low VCE(SAT) 0.35V @ IC / IB = 3A / 100mA (Typ.)  
Excellent DC current gain characteristics  
Part No.  
Package  
SOT-89  
Packing  
TSD2098ACY RM  
1Kpcs / 7” Reel  
Structure  
Epitaxial Planar Type  
NPN Silicon Transistor  
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)  
Parameter  
Symbol  
Limit  
100  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCBO  
VCES  
VCEO  
VEBO  
95  
V
20  
V
6
5
V
DC  
Collector Current  
IC  
A
Pulse  
8 (note1)  
0.6  
Collector Power Dissipation  
PD  
1 (note 2)  
2 (note 3)  
+150  
W
Operating Junction Temperature  
TJ  
oC  
oC  
Operating Junction and Storage Temperature Range  
Note: 1. Single pulse, Pw = 10mS  
TSTG  
- 55 to +150  
2. Printed circuit board, glass epoxy board, 1.7mm thick with collector copper plating 10mm x 10mm.  
3. When mounted on a 40 x 40 x 0.7mm ceramic board  
Electrical Specifications (Ta = 25oC unless otherwise noted)  
Parameter  
Collector-Base Breakdown Voltage  
Conditions  
IC = 50uA, IE = 0  
Symbol  
BVCBO  
BVCES  
BVCEO  
BVEBO  
ICBO  
Min  
100  
95  
20  
6
Typ  
--  
Max  
--  
Unit  
V
Collector-Emitter Breakdown Voltage IC = 50uA, IE = 0  
Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0  
--  
--  
V
--  
--  
V
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
IE = 50uA, IC = 0  
--  
--  
V
VCB = 50V, IE = 0  
VEB = 5V, IC = 0  
--  
0.35  
--  
0.5  
0.5  
1.0  
1.0  
--  
uA  
uA  
Emitter Cutoff Current  
IEBO  
--  
IC = 3A, IB = 100mA  
IC = 3A, IB = 60mA  
VCE = 2V, IC = 20mA  
VCE = 2V, IC = 500mA  
VCE = 2V, IC = 2A  
VCE =6V, IC=50mA,  
f=100MHz  
VCE(SAT)  
VCE(SAT)  
hFE  
--  
0.35  
--  
Collector-Emitter Saturation Voltage  
DC Current Transfer Ratio  
V
--  
230  
260  
150  
--  
hFE  
--  
780  
--  
hFE  
--  
Transition Frequency  
Output Capacitance  
fT  
--  
--  
150  
30  
--  
MHz  
pF  
VCB = 20V, f=1MHz  
Cob  
50  
Note: Pulse test: pulse width 380uS, Duty cycle2%  
1/4  
Version: A07  

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