Datasheet > TSD20H150CW

TSD20H150CW

更新时间： 2024-09-16 01:08:23

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
5页	255K
描述
Trench Schottky Rectifier

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中文翻译

获取价格

数据手册

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TSD20H150CW 数据手册

TSD20H100CW - TSD20H200CW

Taiwan Semiconductor

Trench Schottky Rectifier

FEATURES

- Patented Trench Schottky technology

- Excellent high temperature stability

- Low forward voltage

- Low power loss/ high efficiency

- High forward surge capability

- Compliant to RoHS directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

TO-263AB (D²PAK)

- Halogen-free according to IEC 61249-2-21 definition

TYPICAL APPLICATIONS

Trench Schottky barrier rectifier are designed for high

frequency miniature switched mode power supplies such as

adapters, lighting and on-board DC/DC converters.

MECHANICAL DATA

Case: TO-263AB (D²PAK)

Molding compound meets UL 94 V-0 flammability rating

Packing code with suffix "G" means green compound (halogen-free)

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

Polarity: As marked

Weight: 1.6 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted)

TSD20H

100CW

100

TSD20H

120CW

120

TSD20H

150CW

150

TSD20H

200CW

200

PARAMETER

SYMBOL

V_RRM

UNIT

Maximum repetitive peak reverse voltage

per device

per diode

Maximum average

forward rectified current

I_F(AV)

Peak forward surge current, 8.3ms single half

sine-wave superimposed on rated load per diode

I_FSM

150

Voltage rate of change (Rated V_R)

10000

dV/dt

V/μs

TYP

MAX

TYP

MAX

TYP

MAX

TYP

MAX

I_F= 5A

0.57

0.67

0.50

0.59

0.62

0.78

0.53

0.63

0.72

0.81

0.58

0.66

0.77

0.83

0.62

0.68

T_J= 25°C

Instantaneous forward

voltage per diode

I_F= 10A

0.79

0.87

0.90

0.93

V_F

I_F= 5A

(Note1)

T_J= 125°C

I_F= 10A

0.68

200

0.72

200

0.75

100

0.78

100

T_J= 25°C

μA

Instantaneous reverse current per

diode at rated reverse voltage

I_R

T_J= 125°C

R_θJC

R_θJL

T_J

2.8

3.8

°C/W

°C

Typical thermal resistance per diode

Operating junction temperature range

Storage temperature range

- 55 to +150

T_STG

°C

Note 1: Pulse test with pulse width=300μs, 1% duty cycle

Document Number: DS_D1411067

Version: C15

12 3 4 5

中文翻译

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