Datasheet > TS862C06R

TS862C06R

更新时间： 2024-09-18 08:35:43

品牌	Logo	应用领域
富士电机 - FUJI		二极管
页数	文件大小	规格书
3页	124K
描述
Low IR Schottky barrier diode

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中文翻译

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技术参数
数据手册

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TS862C06R 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.76
Base Number Matches：	1

TS862C06R 数据手册

TS862C06R(60V/10A)

[200509]

Outline drawings, mm

Low IR Schottky barrier diode

10^+0.5

0.2

4.5

1.32

Features

Low IR

Low VF

+0.2

0.2

—0.1

1.2

0.4^+0.2

0.8

Center tap connection

2.7

5.08

Applications

1. Gate

2, 4. Drain

High frequency operation

DC-DCconverters

AC adapter

3. Source

Package : T-pack

Epoxy resin UL : V-0

Connection diagram

Maximum ratings and characteristics

Maximum ratings

Conditions

Rating

Symbol

VRSM

VRRM

Viso

Item

Unit

Repetitive peak surge reverse voltage

Repetitive peak reverse voltage

Isolating voltage

tw=500ns, duty=1/40

Te r m i n a l s - t o - C a s e ,

AC.1min.

Square wave, duty=1/2

Tc=136°C

1500

Average output current

IFSM

PRM

125

330

+150

Non-repetitive surge current

non-repetitive reverse surge power dissipation

Operating junction temperature

Storage temperature

Sine wave 10ms

tw=10µs, Tj=25°C

°C

Tstg

-40 to +150

* Out put current of center tap full wave connection

Electrical characteristics (at Ta=25°C Unless otherwise specified )

Item

Max.

0.68

150

2.0

Conditions

IF=5A

Symbol

V^F

Unit

Forward voltage **

Reverse current **

Thermal resistance

VR=60V

µA

Junction to case

Rth(j-c)

°C/W

**Rating per element

Mechanical characteristics

Recommended torque

Mounting torque

0.3 to 0.5

N·m

Approximate mass

http://www.fujielectric.co.jp/fdt/scd/

12 3

中文翻译

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