TS862C08R-P

更新时间： 2024-09-18 13:14:55

品牌	Logo	应用领域
富士电机 - FUJI		整流二极管肖特基二极管
页数	文件大小	规格书
6页	588K
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中文翻译

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数据手册

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TS862C08R-P 数据手册

http://www.fujisemi.com

FUJI Diode

TS862C08R

Schottky Barrier Diode

Maximum Rating and Characteristics

Maximum ratings (at Ta=25˚C unless otherwise speciﬁed.)

Item

Symbols

Conditions

Ratings

Units

Repetitive peak reverse voltage

VRRM

50Hz square wave duty =1/2

Tc =126 ˚C

Average output current

10*

Non-repetitive forward surge current**

Operating junction temperature

Storage temperature

FSM

Sine wave, 10ms 1shot

125

150

˚C

Tstg

-40 to +150

Note* Out put current of center tap full wave connection.

Note** Rating per element

Electrical characteristics (at Ta=25˚C unless otherwise speciﬁed.)

Item

Symbols

Conditions

Maximum

0.76

Units

Forward voltage***

Reverse current***

Thermal resistance

Note*** Rating per element

I = 5 A

=VRRM

150

µA

Rth(j-c)

Junction to case

2.0

˚C/W

Mechanical characteristics

Item

Conditions

Maximum

Units

Approximate mass

1.6

12 3 4 5 6

中文翻译

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