5秒后页面跳转
TS256MSH64V4X PDF预览

TS256MSH64V4X

更新时间: 2024-09-17 02:51:55
品牌 Logo 应用领域
创见 - TRANSCEND 动态存储器
页数 文件大小 规格书
8页 406K
描述
DRAM Modules

TS256MSH64V4X 数据手册

 浏览型号TS256MSH64V4X的Datasheet PDF文件第2页浏览型号TS256MSH64V4X的Datasheet PDF文件第3页浏览型号TS256MSH64V4X的Datasheet PDF文件第4页浏览型号TS256MSH64V4X的Datasheet PDF文件第5页浏览型号TS256MSH64V4X的Datasheet PDF文件第6页浏览型号TS256MSH64V4X的Datasheet PDF文件第7页 
www.transcend-info.com  
Embedded Sol
DRAM Mpdules  
DDR4  
Transcend's DDR4 DRAM mpdules pꢁerate at a npminal vpltage pf just 1.2V, pꢃering higher energy eꢂciency and  
exceꢁtipnal clpck sꢁeeds tp cater tp the demands pf the embedded industry. The mpdules are available in multiꢁle  
fprm factprs and technplpgies, such as ECC and wide-temꢁerature suꢁꢁprt. All cpmꢁpnents are pf the highest  
quality, having been spurced directly frpm the wprld's ꢄrst-tier suꢁꢁlier pf DRAM chiꢁs and stringently tested fpr  
unꢁaralleled cpmꢁatibility, reliability, and ꢁerfprmance.  
Features  
Advanced Technplpgies  
JEDEC standard 1.2V ꢀ.ꢀ0V ꢁpwer suꢁꢁly  
SO2  
High energy eꢂciency  
Cprner Bpnd &  
Underꢄll  
Anti-Sulfur  
Technplpgy  
Cpnfprmal  
Cpating  
8 bit ꢁre-fetch  
Burst Length: 4, 8  
10 Banks (4 Bank Grpuꢁs)  
30μ”  
Suꢁꢁprt DBI mpde  
Suꢁꢁprt Cpmmand/Address ꢁarity detectipn  
Suꢁꢁprt Data Cyclic Redundancy Check (CRC) fpr imꢁrpved data  
reliability  
Wide  
Temꢁerature  
3ꢀ µ  
Gpld Finger  
On-die terminatipn with ODT ꢁin  
Serial ꢁresence detect with EEPROM  
1ꢀꢀ% tested fpr stability, cpmꢁatibility and ꢁerfprmance  
© Transcend Information, Inc. All Rights Reserved.