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TS256MSK64V3N PDF预览

TS256MSK64V3N

更新时间: 2024-11-07 02:47:19
品牌 Logo 应用领域
创见 - TRANSCEND 动态存储器
页数 文件大小 规格书
7页 417K
描述
DRAM Modules

TS256MSK64V3N 数据手册

 浏览型号TS256MSK64V3N的Datasheet PDF文件第2页浏览型号TS256MSK64V3N的Datasheet PDF文件第3页浏览型号TS256MSK64V3N的Datasheet PDF文件第4页浏览型号TS256MSK64V3N的Datasheet PDF文件第5页浏览型号TS256MSK64V3N的Datasheet PDF文件第6页浏览型号TS256MSK64V3N的Datasheet PDF文件第7页 
www.transcend-info.com  
Embedded Sol
DRAM Mpdules  
DDR3  
Transcend's DDR3 DRAM mpdules pꢁerate at a npminal vpltage pf 1.5V pr 1.35V, pꢂering exceꢁtipnal clpck sꢁeeds tp  
cater tp the demands pf the embedded industry. The mpdules are available in multiꢁle fprm factprs and  
technplpgies, such as ECC and wide-temꢁerature suꢁꢁprt. All cpmꢁpnents are pf the highest quality, having been  
spurced directly frpm the wprld's ꢃrst-tier suꢁꢁlier pf DRAM chiꢁs and stringently tested fpr unꢁaralleled  
cpmꢁatibility, reliability, and ꢁerfprmance.  
Features  
Advanced Technplpgies  
JEDEC standard 1.5V ꢀ.ꢀ05V ꢁpwer suꢁꢁly  
Lpw Vpltage mpdels: JEDEC standard 1.35V (1.28V~1.45V)  
ꢁpwer suꢁꢁly  
SO2  
Cprner Bpnd &  
Underꢃll  
Anti-Sulfur  
Technplpgy  
Cpnfprmal  
Cpating  
8 bit ꢁre-fetch  
Burst Length: 4, 8  
30μ”  
Internal calibratipn thrpugh ZQ ꢁin  
On-die terminatipn with ODT ꢁin  
Serial ꢁresence detect with EEPROM  
1ꢀꢀ% tested fpr stability, cpmꢁatibility and ꢁerfprmance  
Wide  
Temꢁerature  
3ꢀ µ  
Gpld Finger  
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