Datasheet > TQ9142B

TQ9142B

更新时间： 2024-09-18 23:37:31

品牌	Logo	应用领域
其他 - ETC		射频放大器
页数	文件大小	规格书
10页	87K
描述
RF Amplifier

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中文翻译

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数据手册

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TQ9142B 数据手册

WIRELESS COMMUNICATIONS DIVISION

TQ9142B

RF_OUT

RF OUT

GND

DATA SHEET

GND

V_G3

V_D2

High-Efficiency 3-Stage

AMPS Power Amplifier

GND

V_G2

GND

RF_IN

GND

V_D1

Features

V_G1

ꢀ 60% drain efficiency

TQ9142B

ꢀ +31.0 dBm power output @4.8V

ꢀ 4.8 V to 6.0 V battery operation

ꢀ S0-16 package

Product Description

The TQ9142B is a highly efficient 3-stage power amplifier developed for handsets

and portable terminals operating in the AMPS cellular band (824 to 849 MHz). The

part is designed to require minimal external circuitry for matching or bias, simplifying

design and keeping board space and cost to a minimum. Access to each stage’s

gate and drain voltages is provided for maximum flexibility in selection of output

power control method, making output power vs. efficiency tradeoffs, or for

implementing alternative biasing schemes. The amplifier is packaged in a SOIC-16

plastic package with specially modified central thermal tabs. These tabs provide

reliable operation for the 1.4 Watt power output.

ꢀ 50-ohm matched input

Applications

ꢀ AMPS Mobile Phones

ꢀ CDPD Terminals/Modems

Electrical Specifications¹

Parameter

Min

+30

Typ

+31

Max

Units

dBm

Output Power

Efficiency

Input Return Loss

Note 1: Test Conditions: V_DD= 4.8 V, V_GG= -3.5 V, Freq. = 836 MHz, P_IN= 0 dBm, T_C= 25° C

Note 2: Min/max values 100% production tested.

For additional information and latest specifications, see our website: www.triquint.com

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