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TQBL035N04TH-5DL8 PDF预览

TQBL035N04TH-5DL8

更新时间: 2024-11-11 17:01:51
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
6页 614K
描述
40V, N Channel MOSFETs

TQBL035N04TH-5DL8 数据手册

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N-Channel Enhancement Mode MOSFET  
TQBL035N04TH-5DL8  
Features  
Advanced shielded-gate technology  
Ultra-low on-resistance and gate-charge  
HBM: AEC-Q101-001: H1B (JESD22-A114-B: 1B)  
Halogen free  
Qualified to AEC-Q101 standards for high reliability  
Mechanical Data  
Case: PDFN5×6-8L  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,  
Method 208  
PDFN5×6-8L  
Ordering Information  
Part Number  
Package  
PDFN5×6-8L  
Shipping Quantity  
Marking Code  
035N04TH  
TQBL035N04TH-5DL8  
5000 pcs / Tape & Reel  
Maximum Ratings (@ TC = 25°C unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
40  
±20  
V
V
Gate-to-Source Voltage  
Continuous Drain Current (TC = 25°C )  
Continuous Drain Current (TC = 100°C )  
Continuous Drain Current (TA = 25°C ) *1  
Continuous Drain Current (TA = 100°C ) *1  
Pulsed Drain Current (tp =10μs, TC = 25°C )  
Single Pulse Avalanche Energy *3  
Power Dissipation (TC = 25°C)  
125  
A
90  
A
ID  
25  
A
18  
A
IDM  
EAS  
PD  
500  
A
140  
mJ  
W
°C  
°C  
100  
Operating Junction Temperature Range  
Storage Temperature Range  
TJ  
-55 ~ +175  
-55 ~ +175  
TSTG  
Thermal Characteristics  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Thermal Resistance Junction-to-Case  
Thermal Resistance Junction-to-Air *1  
RθJC  
RθJA  
-
-
1.4  
25  
1.5  
40  
°C /W  
°C /W  
MTM1476A: January 2024 [2.1]  
www.gmesemi.com  
1

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