Datasheet > TQBIHEMT

TQBIHEMT

更新时间： 2024-09-19 06:01:47

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
3页	132K
描述
Combined 0.7μm E/D pHEMT & 2μm HBT Foundry Service

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数据手册

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TQBIHEMT 数据手册

Limited Release- Proprietary

TQBiHEMT

Combined 0.7μm E/D pHEMT & 2μm HBT Foundry Service

Features

• E-Mode, 0.30 V, Vth

• D-Mode, -0.8 V Vp

• InGaAs Active Layer pHEMT

Process + InGaP HBT

• 0.7 µm Optical Lithography-

Gates

• 2 µm Optical Lithography- Emit-

ters; Beta = 75

• High Density Interconnects:

•

2 Global

1 Local

• High-Q Passives

• Thin Film Resistors

• High Value Capacitors (1200

pF/µm²)

TQBiHEMT Process Cross-Section

• Backside Vias Optional

• Based on Production TQPED

pHEMT and TQHBT3.1 HBT

General Description

TriQuint’s TQBiHEMT process is based on our production-

released 0.7 µm TQPED and TQHBT3.1 processes. TQPED

includes E-Mode and D-Mode pHEMT transistors. TQHBT3.1 is

a 2 µm emitter InGaP HBT process designed for high rugged-

ness, high power applications. TQBiHEMT combines both proc-

esses onto a single wafer, enabling designers to integrate highly

efficient, high power InGaP HBT PAs onto a single die with

switches, LNAs, mixers and other functions that exhibit higher

performance with a pHEMT realization. This process is targeted

for integration of power amplifiers with linear, low loss and high

isolation RF switch applications, converters and integrated RF

Front Ends. The three metal interconnecting layers are encapsu-

lated in a high performance dielectric that allows wiring flexibil-

ity, optimized die size and plastic packaging simplicity. Precision

NiCr resistors and high value MIM capacitors are included allow-

ing higher levels of integration, while maintaining smaller, cost –

effective die sizes.

Applications

• Integration of Highly Efficient

and Linear Power Amplifiers

• Low Loss, High Isolation, Low-

Harmonic Content Switches

• Integrated digital control logic

for Switches and Transceivers

• Converters

• Integrated RF Front Ends– LNA,

SW, PA

• Wireless Transceivers, Base sta-

tions, Direct Broadcast Satellite

Radars, Digital Radios, RF /

Mixed Signal ICs

• Power Detectors and Couplers

Page 1 of 3; Rev 0.3; 6/05/2008

12 3

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