TPS1100YD

更新时间： 2024-09-24 22:19:15

品牌	Logo	应用领域
德州仪器 - TI		/
页数	文件大小	规格书
10页	156K
描述
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

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TPS1100YD 数据手册

TPS1100, TPS1100Y

SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

SLVS078C – DECEMBER 1993 – REVISED AUGUST 1995

D OR PW PACKAGE

Low r

. . . 0.18 Ω Typ at V

= –10 V

DS(on)

(TOP VIEW)

3 V Compatible

Requires No External V

SOURCE

GATE

DRAIN

TTL and CMOS Compatible Inputs

= –1.5 V Max

GS(th)

Available in Ultrathin TSSOP Package (PW)

ESD Protection Up to 2 kV Per

MIL-STD-883C, Method 3015

D PACKAGE

PW PACKAGE

description

The TPS1100 is

single P-channel

enhancement-mode MOSFET. The device has

been optimized for 3-V or 5-V power distribution

in battery-powered systems by means of Texas

Instruments LinBiCMOS

process. With

schematic

maximum V of –1.5 V and an I

of only

GS(th)

DSS

SOURCE

0.5 µA, the TPS1100 is the ideal high-side switch

for low-voltage, portable battery-management

systemswheremaximizingbatterylifeisaprimary

concern. The low r

and excellent ac

DS(on)

ESD-

characteristics (rise time 10 ns typical) make the

TPS1100 the logical choice for low-voltage

switching applications such as power switches for

pulse-width-modulated (PWM) controllers or

motor/bridge drivers.

Protection

Circuitry

GATE

The ultrathin thin shrink small-outline package or

TSSOP (PW) version with its smaller footprint and

reduction in height fits in places where other

P-channel MOSFETs cannot. The size advantage

is especially important where board real estate is

at a premium and height restrictions do not allow

for a small-outline integrated circuit (SOIC)

package.

DRAIN

NOTE A: For all applications, all source pins should be connected

and all drain pins should be connected.

AVAILABLE OPTIONS

PACKAGED DEVICES

SMALL OUTLINE PLASTIC DIP

CHIP FORM

(Y)

(D)

(P)

–40°C to 85°C

TPS1100D

TPS1100PWLE

TPS1100Y

The D package is available taped and reeled. Add an R suffix to device type (e.g.,

TPS1100DR). The PW package is available only left-end taped and reeled

(indicated by the LE suffix on the device type; e.g., TPS1100PWLE). The chip form

is tested at 25°C.

Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic

fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to

MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than

maximum-rated voltages to these high-impedance circuits.

LinBiCMOS is a trademark of Texas Instruments Incorporated.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

12 3 4 5 6 7...10

中文翻译

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与TPS1100YD相关器件

型号	品牌	获取价格	描述	数据表
TPS1100YPW	TI	获取价格	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101	TI	获取价格	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101_12	TI	获取价格	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101D	TI	获取价格	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101DG4	TI	获取价格	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101DR	TI	获取价格	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101DRG4	TI	获取价格	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101DW	TI	获取价格	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101PW	TI	获取价格	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101PWLE	TI	获取价格	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

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