TPS1101DW

更新时间： 2024-11-18 22:19:15

品牌	Logo	应用领域
德州仪器 - TI		/
页数	文件大小	规格书
10页	163K
描述
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

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TPS1101DW 数据手册

TPS1101, TPS1101Y

SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995

D PACKAGE

(TOP VIEW)

Low r

. . . 0.09 Ω Typ at V

= –10 V

DS(on)

3 V Compatible

Requires No External V

SOURCE

GATE

DRAIN

TTL and CMOS Compatible Inputs

= –1.5 V Max

GS(th)

Available in Ultrathin TSSOP Package (PW)

ESD Protection Up to 2 kV per

MIL-STD-883C, Method 3015

D PACKAGE

description

The TPS1101 is a single, low-r

, P-channel,

DS(on)

enhancement-mode MOSFET. The device has

been optimized for 3-V or 5-V power distribution

in battery-powered systems by means of the

Texas Instruments LinBiCMOS process. With a

PW PACKAGE

maximum V

of –1.5 V and an I

of only

GS(th)

DSS

0.5 µA, the TPS1101 is the ideal high-side switch

for low-voltage, portable battery-management

systemswheremaximizingbatterylifeisaprimary

concern. The low r

and excellent ac

DS(on)

PW PACKAGE

(TOP VIEW)

characteristics (rise time 5.5 ns typical) of the

TPS1101 make it the logical choice for

low-voltage switching applications such as power

switches for pulse-width-modulated (PWM)

controllers or motor/bridge drivers.

SOURCE

GATE

DRAIN

The ultrathin thin shrink small-outline package or

TSSOP (PW) version fits in height-restricted

places where other P-channel MOSFETs cannot.

The size advantage is especially important where

board height restrictions do not allow for an

small-outline integrated circuit (SOIC) package.

Such applications include notebook computers,

personal digital assistants (PDAs), cellular

NC – No internal connection

telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other

P-channel MOSFETs in SOIC packages.

AVAILABLE OPTIONS

†

PACKAGED DEVICES

CHIP FORM

(Y)

SMALL OUTLINE

(D)

TSSOP

(PW)

–40°C to 150°C

TPS1101D

TPS1101PWLE

TPS1101Y

†

The D package is available taped and reeled. Add an R suffix to device type (e.g.,

TPS1101DR). The PW package is only available left-end taped and reeled (indicated by

the LE suffix on the device type; e.g., TPS1101PWLE). The chip form is tested at 25°C.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

LinBiCMOS is a trademark of Texas Instruments Incorporated.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

12 3 4 5 6 7...10

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与TPS1101DW相关器件

型号	品牌	获取价格	描述	数据表
TPS1101PW	TI	获取价格	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101PWLE	TI	获取价格	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101PWR	TI	获取价格	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101PWRG4	TI	获取价格	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101Y	TI	获取价格	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101YDW	TI	获取价格	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101YPW	TI	获取价格	SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS111	ETC	获取价格	Analog IC
TPS1110	TI	获取价格	SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS
TPS1110D	TI	获取价格	SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS

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