Datasheet > TPS1120DRG4

TPS1120DRG4

更新时间： 2024-02-15 14:25:28

品牌	Logo	应用领域
德州仪器 - TI		/
页数	文件大小	规格书
15页	379K
描述
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

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TPS1120DRG4 数据手册

TPS1120, TPS1120Y

DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

SLVS080A – MARCH 1994 – REVISED AUGUST 1995

D PACKAGE

(TOP VIEW)

Low r

. . . 0.18 Ω at V

= –10 V

DS(on)

3-V Compatible

Requires No External V

1SOURCE

1GATE

2SOURCE

2GATE

1DRAIN

2DRAIN

TTL and CMOS Compatible Inputs

= –1.5 V Max

GS(th)

ESD Protection Up to 2 kV per

MIL-STD-883C, Method 3015

description

The TPS1120 incorporates two independent

p-channel enhancement-mode MOSFETs that

have been optimized, by means of the Texas

Instruments LinBiCMOS process, for 3-V or 5-V

power distribution in battery-powered systems. With a maximum V

of –1.5 V and an I

of only 0.5 µA,

GS(th)

DSS

the TPS1120 is the ideal high-side switch for low-voltage portable battery-management systems, where

maximizing battery life is a primary concern. Because portable equipment is potentially subject to electrostatic

discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection. End equipment for the TPS1120

includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and

PCMCIA cards. For existing designs, the TPS1120D has a pinout common with other p-channel MOSFETs in

small-outline integrated circuit SOIC packages.

The TPS1120 is characterized for an operating junction temperature range, T , from –40°C to 150°C.

AVAILABLE OPTIONS

†

PACKAGED DEVICES

CHIP FORM

(Y)

SMALL OUTLINE

(D)

–40°C to 150°C

TPS1120D

TPS1120Y

†

The D package is available taped and reeled. Add an R suffix to device

type (e.g., TPS1120DR). The chip form is tested at 25°C.

Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic

fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to

MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than

maximum-rated voltages to these high-impedance circuits.

LinBiCMS is a trademark of Texas Instruments Incorporated.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

12 3 4 5 6 7...15

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TPS1120DRG4 替代型号

型号	品牌	替代类型	描述	数据表
TPS1120DG4	TI	类似代替	DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1120DR	TI	类似代替	DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1120D	TI	类似代替	DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

与TPS1120DRG4相关器件

型号	品牌	获取价格	描述	数据表
TPS1120Y	TI	获取价格	DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1120YD	TI	获取价格	DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS112T	ETC	获取价格	Analog IC
TPS113	ETC	获取价格	Analog IC
TPS113T	ETC	获取价格	Analog IC
TPS114	ETC	获取价格	Analog IC
TPS114T	ETC	获取价格	Analog IC
TPS115	ETC	获取价格	Analog IC
TPS115T	ETC	获取价格	Analog IC
TPS1200-Q1	TI	获取价格	具有保护和诊断功能的汽车级 45V 低 IQ 高侧驱动器

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