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TPR400 PDF预览

TPR400

更新时间: 2024-09-20 03:26:43
品牌 Logo 应用领域
GHZTECH 晶体双极型晶体管
页数 文件大小 规格书
3页 274K
描述
high power COMMON BASE bipolar transistor.

TPR400 技术参数

生命周期:Transferred包装说明:,
Reach Compliance Code:unknown风险等级:5.6
Is Samacsys:N最大集电极电流 (IC):30 A
配置:Single最小直流电流增益 (hFE):10
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):875 W子类别:Other Transistors
表面贴装:NOBase Number Matches:1

TPR400 数据手册

 浏览型号TPR400的Datasheet PDF文件第2页浏览型号TPR400的Datasheet PDF文件第3页 
TPR 400  
400 Watts, 50 Volts, Pulsed  
Avionics 1030 - 1090 MHz  
GENERAL DESCRIPTION  
CASE OUTLINE  
55CX, STYLE 1  
The TPR 400 is a high power COMMON BASE bipolar transistor. It is  
designed for pulsed systems in the frequency band 1030-1090 MHz. The  
device has gold thin-film metallization for proven highest MTTF. The  
transistor includes input prematch for broadband capability. Low thermal  
resistance package reduces junction temperature, extends life.  
ABSOLUTE MAXIMUM RATINGS  
Maximum Power Dissipation @ 25oC2  
875 Watts  
Maximum Voltage and Current  
BVces  
BVebo Emitter to Base Voltage  
Ic Collector Current  
Collector to Base Voltage  
55 Volts  
4.0 Volts  
30 Amps  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
- 65 to + 150oC  
+ 200oC  
ELECTRICAL CHARACTERISTICS @ 25 OC  
SYMBOL  
CHARACTERISTICS  
TEST CONDITIONS MIN  
TYP  
MAX UNITS  
Power Out  
Power Input  
Power Gain  
F = 1030-1090 MHz  
Vcc = 50 Volts  
400  
Watts  
Watts  
dB  
Pout  
Pin  
Pg  
75  
7.27  
PW = 10 sec  
µ
Collector Efficiency  
Load Mismatch Tolerance  
40  
%
η
DF = 1%  
F = 1090 MHz  
c
20:1  
VSWR  
Emitter to Base Breakdown  
Collector to Emitter Breakdown Ic = 25 mA  
DC - Current Gain  
Thermal Resistance  
Ie = 20 mA  
4.0  
55  
10  
Volts  
Volts  
BVebo  
BVces  
Ic = 2.5 A, Vce = 5 V  
100  
0.2  
hFE  
oC/W  
2
θ
jc  
Note 1: At rated output power and pulse conditions  
2: At rated pulse conditions  
Issue B, February 1998  
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE  
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE  
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.  
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120  

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