Datasheet > TPR65R600M

TPR65R600M

更新时间： 2024-04-09 18:59:25

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		电子
页数	文件大小	规格书
13页	952K
描述
Multi-EPI超结功率MOSFET(Multi-EPI Super Junction MOSFET)是种新型功率器件，无锡紫光微电子限公司在国内率先推出成熟的Multi-EPI超结功率MOSF

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TPR65R600M 数据手册

TPA65R600M,TPB65R600M,TPD65R600M,TPR65R600M,TPU65R600M

Wuxi Unigroup Microelectronics Co.,Ltd

650V Super-junction Power MOSFET

Description

650V Super-junction Power MOSFET

Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed according to the SJ

principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with

highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler, designed by

Wuxi Unigroup Microelectronics Company.

Features

Applications

l Very low FOM R_DS(on)×Q_g

l 100% avalanche tested

l Easy to use/drive

l RoHS compliant

l Switch Mode Power Supply (SMPS)

l Uninterruptible Power Supply (UPS)

l Power Factor Correction (PFC)

l Charger

TO-220FP-NL

TO-220F

TO-263

TO-251

TO-252

Device Marking and Package Information

Device

Package

TO-220F

TO-263

Marking

TPA65R600M

TPB65R600M

TPD65R600M

TPR65R600M

TPU65R600M

65R600M

TO-252

TO-220FP-NL

TO-251

Key Performance Parameters

Parameter

V_DS@ T_j,max

R_DS(on),max

Q_g,typ

Value

700

0.6

Unit

I_D

I_D,pulse

E_OSS@ 400V

Body Diode di_F/dt

1.59

500

μJ

A/μs

V1.0

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