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TPCF8402(TE85L,F) PDF预览

TPCF8402(TE85L,F)

更新时间： 2024-11-28 15:54:55
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
11页 312K
描述
TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,30V V(BR)DSS,4A I(D),TSOP

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TPCF8402(TE85L,F) 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：,Reach Compliance Code：unknown
风险等级：5.84最大漏极电流 (Abs) (ID)：4 A
FET 技术：METAL-OXIDE SEMICONDUCTOR工作模式：ENHANCEMENT MODE
最高工作温度：150 °C极性/信道类型：N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs)：1.35 W子类别：Other Transistors
表面贴装：YESBase Number Matches：1

TPCF8402(TE85L,F) 数据手册

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TPCF8402  
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)  
TPCF8402  
Portable Equipment Applications  
Motor Drive Applications  
Unit: mm  
DC-DC Converter Applications  
•
•
•
•
Low drain-source ON resistance : P Channel R  
N Channel R  
= 60 mΩ (typ.)  
= 38 mΩ (typ.)  
DS (ON)  
DS (ON)  
High forward transfer admittance : P Channel |Y | = 5.9 S (typ.)  
fs  
N Channel |Y | = 6.8 S (typ.)  
fs  
Low leakage current : P Channel I  
N Channel I  
= −10 μA (V  
= −30 V)  
DSS  
DS  
= 10 μA (V  
= 30 V)  
DSS  
DS  
Enhancement-mode  
: P Channel V = −0.8 to −2.0 V (V  
= −10 V, I = −1mA)  
D
th  
DS  
N Channel V = 1.3 to 2.5 V (V  
= 10 V, I = 1mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
-30  
-30  
30  
30  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
±20  
-3.2  
-12.8  
±20  
4.0  
16.0  
GSS  
JEDEC  
JEITA  
―
―
DC  
Drain current  
Pulse  
(Note 1)  
(Note 1)  
I
D
A
I
DP  
TOSHIBA  
2-3U1B  
Single-device operation  
(Note 3a)  
Drain power  
dissipation  
(t = 5 s)  
P
P
P
P
1.35  
1.12  
0.53  
0.33  
1.35  
1.12  
0.53  
0.33  
D (1)  
Weight: 0.011 g (typ.)  
Single-device value at  
dual operation(Note 3b)  
(Note 2a)  
D (2)  
D (1)  
D (2)  
W
Circuit Configuration  
Single-device operation  
(Note 3a)  
Drain power  
dissipation  
(t = 5 s)  
8
7
5
6
Single-device value at  
dual operation(Note 3b)  
(Note 2b)  
Single pulse avalanche energy(Note 4)  
Avalanche current  
E
0.67  
-1.6  
2.6  
2.0  
mJ  
A
AS  
I
AR  
Repetitive avalanche energy  
Single-device value at dual operation  
(Note 2a, 3b, 5)  
E
0.11  
150  
mJ  
AR  
Channel temperature  
T
°C  
°C  
1
2
4
ch  
3
Storage temperature range  
T
−55 to 150  
stg  
Note: For Notes 1 to 5, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and  
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with caution.  
1
2009-12-10  
1234567...11

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