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TPCF8B01(TE85L,F,M)

更新时间： 2024-11-26 15:54:55
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 325K
描述
Small Signal Field-Effect Transistor

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TPCF8B01(TE85L,F,M) 技术参数

生命周期：Active包装说明：,
Reach Compliance Code：unknown风险等级：5.68
Base Number Matches：1

TPCF8B01(TE85L,F,M) 数据手册

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TPCF8B01  
TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode  
TPCF8B01  
Notebook PC Applications  
Unit: mm  
Portable Equipment Applications  
•
•
•
•
•
Low drain-source ON resistance: R  
= 72 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 4.7 S (typ.)  
fs  
Low leakage current: I  
=-10 μA (max) (V  
= -20 V)  
DS  
DSS  
Enhancement-model: V = -0.5 to-1.2 V (V  
=-10 V, I = -200 μA)  
D
th  
DS  
Low forward voltage: V  
= 0.46 V (typ.)  
FM(2)  
Absolute Maximum Ratings  
MOSFET (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-source voltage  
V
-20  
-20  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
±8  
GSS  
DC  
Pulse  
(Note 1)  
(Note 1)  
(Note 4)  
I
-2.7  
-10.8  
1.2  
D
Drain current  
A
I
DP  
Single pulse avalanche energy  
Avalanche current  
E
mJ  
A
AS  
I
-1.35  
AR  
JEDEC  
JEITA  
―
―
Repetitive avalanche energy  
Single-device value at dual operation  
E
0.11  
mJ  
AR  
(Note 2a, 3b, 5)  
TOSHIBA  
2-3U1C  
SBD (Ta = 25°C)  
Weight: 0.011 g (typ.)  
Characteristics  
Symbol  
Rating  
Unit  
Circuit Configuration  
Repetitive peak reverse voltage  
V
20  
V
A
RRM  
Average forward current (Note 2a, 6)  
I
1.0  
F(AV)  
8
7
5
6
Peak one cycle surge forward current  
(non-repetitive)  
I
7(50Hz)  
A
FSM  
Absolute Maximum Ratings for MOSFET and SBD (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Single-device operation  
P
P
P
P
1.35  
D (1)  
D (2)  
D (1)  
D (2)  
Drain power  
(Note 3a)  
Single-device value at  
1
2
4
3
dissipation  
(t = 5 s) (Note 2a)  
1.12  
0.53  
0.33  
dual operation (Note 3b)  
W
Single-device operation  
(Note 3a)  
Drain power  
dissipation  
(t = 5 s) (Note 2b)  
Single-device value at  
dual operation (Note 3b)  
Channel temperature  
T
150  
°C  
°C  
ch  
Storage temperature range  
T
stg  
-55~150  
Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6), please refer to the next page.  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
1
2009-09-29  
1234567...9

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