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TPCF8A01

更新时间： 2024-11-26 08:40:07
品牌 Logo 应用领域
东芝 - TOSHIBA 电脑便携式便携式设备PC
页数 文件大小 规格书
9页 325K
描述
Notebook PC Applications Portable Equipment Applications

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中文翻译

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TPCF8A01 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F8
Reach Compliance Code：unknown风险等级：5.92
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (Abs) (ID)：3 A最大漏极电流 (ID)：3 A
最大漏源导通电阻：0.1 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-F8元件数量：1
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：1.35 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管元件材料：SILICON

TPCF8A01 数据手册

 浏览型号TPCF8A01的Datasheet PDF文件第2页浏览型号TPCF8A01的Datasheet PDF文件第3页浏览型号TPCF8A01的Datasheet PDF文件第4页浏览型号TPCF8A01的Datasheet PDF文件第5页浏览型号TPCF8A01的Datasheet PDF文件第6页浏览型号TPCF8A01的Datasheet PDF文件第7页 
TPCF8A01  
TOSHIBA Multi-Chip Device Silicon N Channel MOS Type (U-MOS III) / Schottky Barrier Diode  
TPCF8A01  
Notebook PC Applications  
Portable Equipment Applications  
Unit: mm  
•
•
•
•
•
Low drain-source ON resistance: R  
= 38 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 5.4 S (typ.)  
fs  
= 10 µA (max) (V  
Low leakage current: I  
= 20 V)  
DSS  
DS  
Enhancement mode: V = 0.5 to 1.2 V (V  
= 10 V, I = 200 µA)  
th  
DS  
D
Low forward voltage: V  
= 0.46V(typ.)  
FM(2)  
Absolute Maximum Ratings  
MOSFET (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Drain-source voltage  
V
20  
20  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
DGR  
GS  
V
±12  
3
GSS  
DC  
Pulse  
(Note 1)  
(Note 1)  
(Note 4)  
I
D
Drain current  
A
I
12  
DP  
Single pulse avalanche energy  
Avalanche current  
E
1.46  
1.5  
mJ  
A
AS  
AR  
JEDEC  
JEITA  
―
―
I
Repetitive avalanche energy  
Single-device value at dual operation  
(Note 2a, 3b, 5)  
E
0.11  
mJ  
TOSHIBA  
2-3U1C  
AR  
Weight: 0.011 g (typ.)  
SBD (Ta = 25°C)  
Circuit Configuration  
Characteristics  
Symbol  
Rating  
Unit  
Repetitive peak reverse voltage  
V
20  
V
A
8
7
6
5
RRM  
Average forward current (Note 2a, 6)  
I
1.0  
F(AV)  
Peak one cycle surge forward current  
(non-repetitive)  
I
7(50Hz)  
A
FSM  
Absolute Maximum Ratings for MOSFET and SBD (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
1.35  
1.12  
0.53  
0.33  
Unit  
1
2
3
4
Single-device operation  
P
P
P
P
D (1)  
D (2)  
D (1)  
D (2)  
Drain power  
dissipation  
(Note 3a)  
Single-device value at  
dual operation (Note 3b)  
(t = 5 s) (Note 2a)  
W
Single-device operation  
(Note 3a)  
Drain power  
dissipation  
Single-device value at  
dual operation (Note 3b)  
(t = 5 s) (Note 2b)  
Channel temperature  
T
150  
°C  
°C  
ch  
Storage temperature range  
T
stg  
-55~150  
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) and (Note 7): See the next page.  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
1
2007-01-16  
1234567...9

中文翻译

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