Datasheet > TPCF8402_0912

TPCF8402_0912

更新时间： 2024-11-26 11:55:55

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器电机驱动便携式便携式设备
页数	文件大小	规格书
11页	313K
描述
Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications

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TPCF8402_0912 数据手册

TPCF8402

TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)

TPCF8402

Portable Equipment Applications

Motor Drive Applications

Unit: mm

DC-DC Converter Applications

•

Low drain-source ON resistance : P Channel R

N Channel R

= 60 mΩ (typ.)

= 38 mΩ (typ.)

DS (ON)

High forward transfer admittance : P Channel |Y | = 5.9 S (typ.)

N Channel |Y | = 6.8 S (typ.)

Low leakage current : P Channel I

N Channel I

= −10 μA (V

= −30 V)

DSS

= 10 μA (V

= 30 V)

DSS

Enhancement-mode

: P Channel V = −0.8 to −2.0 V (V

= −10 V, I = −1mA)

N Channel V = 1.3 to 2.5 V (V

= 10 V, I = 1mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

-30

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

±20

-3.2

-12.8

±20

4.0

16.0

GSS

JEDEC

JEITA

―

Drain current

Pulse

(Note 1)

TOSHIBA

2-3U1B

Single-device operation

(Note 3a)

Drain power

dissipation

(t = 5 s)

1.35

1.12

0.53

0.33

1.35

1.12

0.53

0.33

D (1)

Weight: 0.011 g (typ.)

Single-device value at

dual operation(Note 3b)

(Note 2a)

D (2)

D (1)

D (2)

Circuit Configuration

Single-device operation

(Note 3a)

Drain power

dissipation

(t = 5 s)

Single-device value at

dual operation(Note 3b)

(Note 2b)

Single pulse avalanche energy(Note 4)

Avalanche current

0.67

-1.6

2.6

2.0

Repetitive avalanche energy

Single-device value at dual operation

(Note 2a, 3b, 5)

0.11

150

Channel temperature

°C

Storage temperature range

−55 to 150

stg

Note: For Notes 1 to 5, refer to the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with caution.

2009-12-10

12 3 4 5 6 7...11

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