Datasheet > TPCF8B01_09

TPCF8B01_09

更新时间： 2024-11-26 08:40:07

品牌	Logo	应用领域
东芝 - TOSHIBA		电脑便携式便携式设备 PC
页数	文件大小	规格书
9页	306K
描述
Notebook PC Applications Portable Equipment Applications

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中文翻译

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TPCF8B01_09 数据手册

TPCF8B01

TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode

TPCF8B01

Notebook PC Applications

Unit: mm

Portable Equipment Applications

•

Low drain-source ON resistance: R

= 72 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 4.7 S (typ.)

Low leakage current: I

=-10 μA (max) (V

= -20 V)

DSS

Enhancement-model: V = -0.5 to-1.2 V (V

=-10 V, I = -200 μA)

Low forward voltage: V

= 0.46 V (typ.)

FM(2)

Absolute Maximum Ratings

MOSFET (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

-20

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

±8

GSS

Pulse

(Note 1)

(Note 4)

-2.7

-10.8

1.2

Drain current

Single pulse avalanche energy

Avalanche current

-1.35

JEDEC

JEITA

―

Repetitive avalanche energy

Single-device value at dual operation

0.11

(Note 2a, 3b, 5)

TOSHIBA

2-3U1C

SBD (Ta = 25°C)

Weight: 0.011 g (typ.)

Characteristics

Symbol

Rating

Unit

Circuit Configuration

Repetitive peak reverse voltage

RRM

Average forward current (Note 2a, 6)

1.0

F(AV)

Peak one cycle surge forward current

(non-repetitive)

7(50Hz)

FSM

Absolute Maximum Ratings for MOSFET and SBD (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Single-device operation

1.35

D (1)

D (2)

D (1)

D (2)

Drain power

(Note 3a)

Single-device value at

dissipation

(t = 5 s) (Note 2a)

1.12

0.53

0.33

dual operation (Note 3b)

Single-device operation

(Note 3a)

Drain power

dissipation

(t = 5 s) (Note 2b)

Single-device value at

dual operation (Note 3b)

Channel temperature

150

°C

Storage temperature range

stg

-55~150

Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6), please refer to the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

2009-09-29

12 3 4 5 6 7...9

中文翻译

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