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TPA100R800A PDF预览

TPA100R800A

更新时间: 2024-11-11 15:17:43
品牌 Logo 应用领域
无锡紫光微 - WUXI UNIGROUP /
页数 文件大小 规格书
10页 662K
描述
超结功率 MOSFET(Super Junction MOSFET)是一种新型功率器件,采用基于电荷平衡的器件结构,导通电阻明显下降。在应用中可减小系统功率损耗并提高其转换效率,目前国际上Infi

TPA100R800A 数据手册

 浏览型号TPA100R800A的Datasheet PDF文件第2页浏览型号TPA100R800A的Datasheet PDF文件第3页浏览型号TPA100R800A的Datasheet PDF文件第4页浏览型号TPA100R800A的Datasheet PDF文件第5页浏览型号TPA100R800A的Datasheet PDF文件第6页浏览型号TPA100R800A的Datasheet PDF文件第7页 
TPA100R800A, TPB100R800A, TPW100R800A  
Wuxi Unigroup Microelectronics Co.,Ltd  
1000V Super-junction Power MOSFET  
Description  
1000V super-junction Power MOSFET  
Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ  
principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses device with  
highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler, designed by  
Wuxi Unigroup Microelectronics Company.  
Features  
Applications  
l Very low FOM RDS(on)×Qg  
l 100% avalanche tested  
l Easy to use/drive  
l RoHS compliant  
l Switch Mode Power Supply (SMPS)  
l Uninterruptible Power Supply (UPS)  
l Power Factor Correction (PFC)  
l Low Power Chargers and Adapters  
TO-220F  
TO-247  
TO-263  
Device Marking and Package Information  
Device  
Package  
TO-220F  
TO-263  
TO-247  
Marking  
TPA100R800A  
TPB100R800A  
TPW100R800A  
100R800A  
100R800A  
100R800A  
Key Performance Parameters  
Parameter  
Value  
1000  
0.8  
Unit  
V
VDS  
RDS(on),max  
Qg,typ  
Ω
60  
nC  
A
ID  
12  
ID,pulse  
36  
A
V1.0  
www.tsinghuaicwx.com  
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