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TPA112D PDF预览

TPA112D

更新时间: 2024-11-24 22:42:03
品牌 Logo 应用领域
德州仪器 - TI 消费电路商用集成电路音频放大器视频放大器功率放大器光电二极管
页数 文件大小 规格书
28页 472K
描述
150-mW STEREO AUDIO POWER AMPLIFIER

TPA112D 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01Factory Lead Time:1 week
风险等级:5.22Is Samacsys:N
标称带宽:20 kHz商用集成电路类型:AUDIO AMPLIFIER
增益:20 dB谐波失真:0.1%
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.9 mm湿度敏感等级:1
信道数量:2功能数量:1
端子数量:8最高工作温度:85 °C
最低工作温度:-40 °C标称输出功率:0.07 W
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:Audio/Video Amplifiers最大压摆率:3 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mmBase Number Matches:1

TPA112D 数据手册

 浏览型号TPA112D的Datasheet PDF文件第2页浏览型号TPA112D的Datasheet PDF文件第3页浏览型号TPA112D的Datasheet PDF文件第4页浏览型号TPA112D的Datasheet PDF文件第5页浏览型号TPA112D的Datasheet PDF文件第6页浏览型号TPA112D的Datasheet PDF文件第7页 
TPA112  
150-mW STEREO AUDIO POWER AMPLIFIER  
SLOS212C – AUGUST 1998 – REVISED MARCH 2000  
D OR DGN PACKAGE  
(TOP VIEW)  
150-mW Stereo Output  
Wide Range of Supply Voltages  
– Fully Specified for 3.3 V and 5 V  
Operation  
V 1  
O
V
DD  
1
2
3
4
8
7
6
5
IN1–  
IN1+  
GND  
V 2  
O
– Operational From 2.5 V to 5.5 V  
IN2–  
IN2+  
Thermal and Short-Circuit Protection  
Surface Mount Packaging  
– PowerPAD MSOP  
– SOIC  
Standard Operational Amplifier Pinout  
description  
The TPA112 is a stereo audio power amplifier packaged in an 8-pin PowerPAD MSOP package capable of  
delivering 150 mW of continuous RMS power per channel into 8-loads. Amplifier gain is externally configured  
by means of two resistors per input channel and does not require external compensation for settings of 1 to 10.  
THD+N when driving an 8-load from 5 V is 0.1% at 1 kHz, and less than 2% across the audio band of 20 Hz  
to 20 kHz. For 32-loads, the THD+N is reduced to less than 0.06% at 1 kHz, and is less than 1% across the  
audiobandof20Hzto20kHz. For10-kloads, theTHD+Nperformanceis0.01%at1kHz, andlessthan0.02%  
across the audio band of 20 Hz to 20 kHz.  
functional block diagram  
R
F
V
8
1
DD  
V
DD  
Short-Circuit  
Protection  
C
C
I
I
R
R
I
L
L
+
IN  
C
IN1–  
IN1+  
C
2
3
V
1
2
O
O
I
IN  
R
R
C
O
R
R
F
F
To Headphone  
Jack  
V
DD/2  
(See TPA152)  
C
C
I
I
R
I
IN2–  
IN2+  
6
5
C
C
R
R
+
IN  
V
7
4
R
R
R
O
C
I
IN  
Over-Temperature  
Protection  
R
F
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PowerPAD is a trademark of Texas Instruments.  
Copyright 2000, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

TPA112D 替代型号

型号 品牌 替代类型 描述 数据表
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