Datasheet > TP0610T

TP0610T

更新时间： 2023-12-06 20:03:31

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
14页	1516K
描述
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure

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TP0610T 数据手册

TP0610T

FIGURE 2-7:

Temperature.

BV_DSSVariation with

Transfer Characteristics.

Capacitance vs.

FIGURE 2-10:

Current.

On-Resistance vs. Drain

FIGURE 2-8:

FIGURE 2-11:

Temperature.

V_(th)and R_DSVariation with

FIGURE 2-9:

FIGURE 2-12:

Gate Drive Dynamic

Drain-to-source Voltage.

Characteristics.

 2019-2020 Microchip Technology Inc.

DS20005701B-page 5

1 2 3 456 7 8...14

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型号	品牌	描述	获取价格	数据表
TP0610T-1T1	VISHAY	Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Meta	获取价格
TP0610T-1T2	VISHAY	Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Meta	获取价格
TP0610T-2T1	VISHAY	Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Meta	获取价格
TP0610T-2T2	VISHAY	Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Meta	获取价格
TP0610T-G	SUPERTEX	Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Meta	获取价格
TP0610TT1	VISHAY	Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Meta	获取价格