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TOX9101 PDF预览

TOX9101

更新时间: 2024-11-17 23:37:07
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
2页 52K
描述
QUADRANT/CIRCULAR DETECTOR

TOX9101 数据手册

 浏览型号TOX9101的Datasheet PDF文件第2页 
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TOX 9101  
Quadrant Silicon Photodetector  
Go  
DESCRIPTION  
FEATURES  
The TOX 9101 is an N-Type quadrant silicon photodiode with  
quadrant separation of 0.0254 mm (0.001 inch). These photodiodes  
are typically used as position sensors for applications such as optical  
tracking, optical alignment, and angular displacement.  
High responsivity at 900 nm  
5 Lead TO-8 hermetic package  
Cathode in electrical contact with case  
Active area 0.197 inch diameter  
ABSOLUTE MAXIMUM RATINGS  
Storage temperature..............................................-65°C to +150°C  
Operating temperature...........................................-40°C to + 85°C  
Reverse voltage......................................................25° V  
ELECTRO-OPTICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)  
TEST  
SYMBOL  
UNITS  
PARAMETERCONDITIONS  
MINTYPMAX  
IR = 10 ¼A  
BVR  
ID  
Breakdown Voltage  
Dark Current (Per  
Quadrant)  
25  
V
nA  
VR =10 V  
20  
0.5  
50  
100  
VR = 1.5 V, » = 900 nm  
VR = 0 V  
Re  
Responsivity  
Capacitance (Per  
Quadrant)  
0.35  
A/W  
pF  
CT  
100  
VR = 1.5 V, » = 900 nm  
VR = 1.5 V, » = 900 nm .  
Uniformity  
Crosstalk  
5
1
7
2
%
%
http://www.texas-opto.com/catalog/tox9101/tox9101.asp (1 of 2) [2/6/2002 3:31:49 PM]  

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