TOX 9108
Large Area Silicon
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Quadrant PIN Photodiode
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DESCRIPTION
FEATURES
The TOX 9108 is a high speed, quadrant-geometry,
high-resistivity P-type silicon photodiode. It is a precision
device designed specifically for application in laser alignment
and guidance systems. A guard-rign structure is utilized to
provide excellent low-noise characteristics. Operation in the
fully depleted mode results in high speed and high radiant
responsivity. Crosstalk between any two quadrants is less
than five percent. Anti-reflection coatings on the photodiode
surface, normally peaked for 1.06 µm wavelength, can be
adjusted to customer specification.
● Quadrant geometry for alignment and tracking applications
● Diameter of active area, 0.650 inch
● Rise and fall time, 10 ns Typ at 900 nm wavelength
● Dark current 500 nA Typ per quadrant
● Radiant responsivity 0.40 A/W Typ at » = 1.06 ¼m, 0.50 A/W Typ at »
=0.9 µm
● Sensitive to wavelengths from 0.60 µm to 1.06 µm
ABSOLUTE MAXIMUM RATINGS
Forward voltage.....................................................................................................0.5 V
Reverse voltage.....................................................................................................250 V
Continuous power dissipation per quadrant at (or below) 25° C case temperature
(See note 1).......................................................................................................500mW
Operating case temperature range...................................................................-65° C to 100° C
Storage temperature range..............................................................................-65° C to 125° C
Lead temperature 1/16 inch from case for 10 seconds............................................300° C
Note:1. Derate linearly to 125 mW at 100° C case temperature at the rate of 5 mW/°C.
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