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TN16

更新时间: 2024-11-10 22:19:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可控硅
页数 文件大小 规格书
7页 95K
描述
16A SCRs

TN16 数据手册

 浏览型号TN16的Datasheet PDF文件第2页浏览型号TN16的Datasheet PDF文件第3页浏览型号TN16的Datasheet PDF文件第4页浏览型号TN16的Datasheet PDF文件第5页浏览型号TN16的Datasheet PDF文件第6页浏览型号TN16的Datasheet PDF文件第7页 
TN16 and TYNx16 Series  
®
STANDARD  
16A SCRs  
MAIN FEATURES:  
Symbol  
A
Value  
16  
Unit  
A
G
I
T(RMS)  
K
V
/V  
600 to 1000  
25  
V
DRM RRM  
A
I
mA  
GT  
A
K
A
G
K
DESCRIPTION  
A
G
2
D PAK  
The TYN / TN16 SCR Series is suitable for  
general purpose applications.  
Using clip assembly technology, they provide a  
superior performance in surge current capabilities.  
(TN16-G)  
TO-220AB  
(TYN)  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current (180° conduction angle)  
T(RMS)  
Tc = 110°C  
16  
10  
A
A
T
Average on-state current (180° conduction angle)  
(AV)  
Tc = 110°C  
Tj = 25°C  
I
Non repetitive surge peak on-state  
current  
tp = 8.3 ms  
tp = 10 ms  
200  
190  
TSM  
A
²
²
2
tp = 10 ms  
F = 60 Hz  
tp = 20 µs  
Tj = 25°C  
180  
50  
A S  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
Tj = 125°C  
A/µs  
I
= 2 x I , tr 100 ns  
G
GT  
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
4
1
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
V
Tj  
V
Maximum peak reverse gate voltage  
5
RGM  
April 2002 - Ed: 4A  
1/7  

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TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | TO-237VAR