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TN1625-600G PDF预览

TN1625-600G

更新时间: 2024-11-10 22:42:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 栅极触发装置可控硅整流器
页数 文件大小 规格书
7页 95K
描述
16A SCRs

TN1625-600G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:5.17
Is Samacsys:N其他特性:HIGH RELIABILITY
外壳连接:ANODE配置:SINGLE
关态电压最小值的临界上升速率:500 V/us最大直流栅极触发电流:25 mA
最大直流栅极触发电压:1.3 V最大维持电流:40 mA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
最大漏电流:0.005 mA湿度敏感等级:1
通态非重复峰值电流:199 A元件数量:1
端子数量:2最大通态电流:16000 A
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
认证状态:Not Qualified最大均方根通态电流:16 A
重复峰值关态漏电流最大值:5 µA断态重复峰值电压:600 V
重复峰值反向电压:600 V子类别:Silicon Controlled Rectifiers
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30触发设备类型:SCR
Base Number Matches:1

TN1625-600G 数据手册

 浏览型号TN1625-600G的Datasheet PDF文件第2页浏览型号TN1625-600G的Datasheet PDF文件第3页浏览型号TN1625-600G的Datasheet PDF文件第4页浏览型号TN1625-600G的Datasheet PDF文件第5页浏览型号TN1625-600G的Datasheet PDF文件第6页浏览型号TN1625-600G的Datasheet PDF文件第7页 
TN16 and TYNx16 Series  
®
STANDARD  
16A SCRs  
MAIN FEATURES:  
Symbol  
A
Value  
16  
Unit  
A
G
I
T(RMS)  
K
V
/V  
600 to 1000  
25  
V
DRM RRM  
A
I
mA  
GT  
A
K
A
G
K
DESCRIPTION  
A
G
2
D PAK  
The TYN / TN16 SCR Series is suitable for  
general purpose applications.  
Using clip assembly technology, they provide a  
superior performance in surge current capabilities.  
(TN16-G)  
TO-220AB  
(TYN)  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current (180° conduction angle)  
T(RMS)  
Tc = 110°C  
16  
10  
A
A
T
Average on-state current (180° conduction angle)  
(AV)  
Tc = 110°C  
Tj = 25°C  
I
Non repetitive surge peak on-state  
current  
tp = 8.3 ms  
tp = 10 ms  
200  
190  
TSM  
A
²
²
2
tp = 10 ms  
F = 60 Hz  
tp = 20 µs  
Tj = 25°C  
180  
50  
A S  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
Tj = 125°C  
A/µs  
I
= 2 x I , tr 100 ns  
G
GT  
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
4
1
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
V
Tj  
V
Maximum peak reverse gate voltage  
5
RGM  
April 2002 - Ed: 4A  
1/7  

TN1625-600G 替代型号

型号 品牌 替代类型 描述 数据表
TN1625-600G-TR STMICROELECTRONICS

类似代替

16A SCRs
S6016N LITTELFUSE

功能相似

SCRs (1 A to 70 A)