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TN1625-1000G-TR PDF预览

TN1625-1000G-TR

更新时间: 2024-11-10 22:06:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 栅极可控硅
页数 文件大小 规格书
7页 95K
描述
16A SCRs

TN1625-1000G-TR 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:D2PAK包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.30.00.80
Factory Lead Time:11 weeks风险等级:0.73
Is Samacsys:N外壳连接:ANODE
配置:SINGLE关态电压最小值的临界上升速率:500 V/us
最大直流栅极触发电流:25 mA最大直流栅极触发电压:1.3 V
最大维持电流:40 mAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3最大漏电流:2 mA
湿度敏感等级:1通态非重复峰值电流:190 A
元件数量:1端子数量:2
最大通态电流:10000 A最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245认证状态:Not Qualified
最大均方根通态电流:16 A断态重复峰值电压:1000 V
重复峰值反向电压:1000 V子类别:Silicon Controlled Rectifiers
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30触发设备类型:SCR
Base Number Matches:1

TN1625-1000G-TR 数据手册

 浏览型号TN1625-1000G-TR的Datasheet PDF文件第2页浏览型号TN1625-1000G-TR的Datasheet PDF文件第3页浏览型号TN1625-1000G-TR的Datasheet PDF文件第4页浏览型号TN1625-1000G-TR的Datasheet PDF文件第5页浏览型号TN1625-1000G-TR的Datasheet PDF文件第6页浏览型号TN1625-1000G-TR的Datasheet PDF文件第7页 
TN16 and TYNx16 Series  
®
STANDARD  
16A SCRs  
MAIN FEATURES:  
Symbol  
A
Value  
16  
Unit  
A
G
I
T(RMS)  
K
V
/V  
600 to 1000  
25  
V
DRM RRM  
A
I
mA  
GT  
A
K
A
G
K
DESCRIPTION  
A
G
2
D PAK  
The TYN / TN16 SCR Series is suitable for  
general purpose applications.  
Using clip assembly technology, they provide a  
superior performance in surge current capabilities.  
(TN16-G)  
TO-220AB  
(TYN)  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current (180° conduction angle)  
T(RMS)  
Tc = 110°C  
16  
10  
A
A
T
Average on-state current (180° conduction angle)  
(AV)  
Tc = 110°C  
Tj = 25°C  
I
Non repetitive surge peak on-state  
current  
tp = 8.3 ms  
tp = 10 ms  
200  
190  
TSM  
A
²
²
2
tp = 10 ms  
F = 60 Hz  
tp = 20 µs  
Tj = 25°C  
180  
50  
A S  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
Tj = 125°C  
A/µs  
I
= 2 x I , tr 100 ns  
G
GT  
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
4
1
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
V
Tj  
V
Maximum peak reverse gate voltage  
5
RGM  
April 2002 - Ed: 4A  
1/7  

TN1625-1000G-TR 替代型号

型号 品牌 替代类型 描述 数据表
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