Datasheet > TN1610H-6I

TN1610H-6I

更新时间： 2024-11-11 21:15:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
10页	217K
描述
Silicon Controlled Rectifier

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技术参数
数据手册

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TN1610H-6I 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.75	触发设备类型：	SCR
Base Number Matches：	1

TN1610H-6I 数据手册

TN1610H-6I

Datasheet

16 A 600 V high temperature SCR thyristors in insulated TO-220

Features

•

High junction temperature: T_j= 150 °C

High noise immunity dV/dt = 1000 V/µs up to 150 °C

Peak off-state voltage V_DRM/V_RRM= 600 V

High turn-on current rise dI/dt = 100 A/µs

Insulated package TO-220AB:

–

Insulated voltage: 2500 V_RMS

Complies with UL 1557 (File ref : E81734)

•

ECOPACK2 compliant

Halogen-free molding, lead-free plating

TO-220AB insulated

Applications

•

General purpose AC line load switching

Motor control circuits and starters

Inrush current limiting circuits

Heating resistor control, solid state relays

Description

Thanks to its operating junction temperature up to 150°C, the TN1610H-6I offers high

thermal performance operation up to 16 A rms.

Product status

Its trade-off noise immunity (dV/dt = 1000 V/μs) versus its gate triggering current

(I_GT= 10 mA) and its turn-on current rise (dI/dt = 100 A/μs) allows to design robust

and compact control circuit for voltage regulator in motorbikes and industrial drives,

overvoltage crowbar protection, motor control circuits in power tools and kitchen

appliances and inrush current limiting circuits.

TN1610H-6I

Product summary

Order code

TN1610H-6I

TO-220AB Ins.

16 A

Package

T(RMS)

600 V

DRM RRM

T max.

150 °C

DS13199 - Rev 1 - December 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...10

中文翻译

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