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TMS44400-60DM PDF预览

TMS44400-60DM

更新时间： 2024-11-11 14:45:15
品牌 Logo 应用领域
德州仪器 - TI 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
25页 451K
描述
1MX4 FAST PAGE DRAM, 60ns, PDSO20, 0.350 INCH, PLASTIC, SOJ-26/20

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TMS44400-60DM 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Obsolete零件包装代码：SOJ
包装说明：0.350 INCH, PLASTIC, SOJ-26/20针数：20
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8542.32.00.02风险等级：5.55
Is Samacsys：N访问模式：FAST PAGE
最长访问时间：60 ns其他特性：RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型：COMMONJESD-30 代码：R-PDSO-J20
长度：17.145 mm内存密度：4194304 bit
内存集成电路类型：FAST PAGE DRAM内存宽度：4
功能数量：1端口数量：1
端子数量：20字数：1048576 words
字数代码：1000000工作模式：ASYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：1MX4输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：SOJ
封装等效代码：SOJ20/26,.4封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
电源：5 V认证状态：Not Qualified
刷新周期：1024座面最大高度：3.76 mm
自我刷新：NO最大待机电流：0.001 A
子类别：DRAMs最大压摆率：0.095 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子形式：J BEND端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：8.89 mmBase Number Matches：1

TMS44400-60DM 数据手册

 浏览型号TMS44400-60DM的Datasheet PDF文件第2页浏览型号TMS44400-60DM的Datasheet PDF文件第3页浏览型号TMS44400-60DM的Datasheet PDF文件第4页浏览型号TMS44400-60DM的Datasheet PDF文件第5页浏览型号TMS44400-60DM的Datasheet PDF文件第6页浏览型号TMS44400-60DM的Datasheet PDF文件第7页 
TMS44400, TMS44400P, TMS46400, TMS46400P  
1048576-WORD BY 4-BIT  
DYNAMIC RANDOM-ACCESS MEMORIES  
SMHS562C – MAY 1995 – REVISED NOVEMBER 1996  
DGA PACKAGE  
(TOP VIEW)  
DJ PACKAGE  
(TOP VIEW)  
Organization . . . 1048576 × 4  
Single 5-V Power Supply for TMS44400/P  
(±10% Tolerance)  
DQ1  
DQ2  
W
RAS  
A9  
1
2
3
4
5
26  
25  
24  
23  
22  
V
DQ1  
DQ2  
W
RAS  
A9  
1
2
3
4
5
26  
25  
24  
23  
22  
V
SS  
SS  
Single 3.3-V Power Supply for TMS46400/P  
(±10% Tolerance)  
DQ4  
DQ3  
CAS  
OE  
DQ4  
DQ3  
CAS  
OE  
Low Power Dissipation (TMS46400P only)  
200-µA CMOS Standby  
200-µA Self Refresh  
300-µA Extended-Refresh Battery  
Backup  
A0  
A1  
A2  
A3  
9
18  
17  
16  
15  
14  
A8  
A7  
A6  
A5  
A4  
A0  
A1  
A2  
A3  
9
18  
17  
16  
15  
14  
A8  
A7  
A6  
A5  
A4  
10  
11  
12  
13  
10  
11  
12  
13  
Performance Ranges:  
ACCESS ACCESS ACCESS  
TIME TIME TIME OR WRITE  
(t (t  
READ  
V
V
CC  
CC  
)
)
(t  
AA  
)
CYCLE  
(MIN)  
RAC CAC  
(MAX)  
60 ns  
70 ns  
80 ns  
(MAX)  
15 ns  
18 ns  
20 ns  
(MAX)  
30 ns  
35 ns  
40 ns  
’4x400/P-60  
’4x400/P-70  
’4x400/P-80  
110 ns  
130 ns  
150 ns  
PIN NOMENCLATURE  
A0–A9  
CAS  
Address Inputs  
Column-Address Strobe  
Data In  
Enhanced Page-Mode Operation for Faster  
Memory Access  
DQ1–DQ4  
OE  
Output Enable  
Row-Address Strobe  
5-V or 3.3-V Supply  
Ground  
CAS-Before-RAS (CBR) Refresh  
RAS  
V
V
CC  
Long Refresh Period  
SS  
1024-Cycle Refresh in 16 ms  
128 ms (MAX) for Low-Power,  
Self-Refresh Version (TMS4x400P)  
W
Write Enable  
3-State Unlatched Output  
Operating Free-Air Temperature Range  
0°C to 70°C  
Texas Instruments EPIC CMOS Process  
description  
AVAILABLE OPTIONS  
SELF-REFRESH  
The TMS4x400 series is a set of high-speed,  
4194304-bit dynamic random-access memories  
(DRAMs), organized as 1048576 words of four  
bits each. The TMS4x400P series is a set of  
high-speed,  
extended-refresh,  
POWER  
SUPPLY  
REFRESH  
CYCLES  
DEVICE  
BATTERY  
BACKUP  
TMS44400  
TMS44400P  
TMS46400  
TMS46400P  
5 V  
5 V  
—
Yes  
—
1024 in 16 ms  
low-power,  
self-refresh  
with  
1024 in 128 ms  
1024 in 16 ms  
1024 in 128 ms  
4194304-bit  
DRAMs,  
3.3 V  
3.3 V  
organized as 1048576 words of four bits each.  
Both series employ state-of-the-art enhanced  
Yes  
performance  
technology for high performance, reliability, and  
low power.  
implanted  
CMOS  
(EPIC )  
These devices feature maximum RAS access times of 60 ns, 70 ns, and 80 ns. All addresses and data-in lines  
are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility.  
TheTMS4x400andTMS4x400Pareofferedina20/26-leadplasticsmall-outline(TSOP)package(DGAsuffix)  
and a 300-mil 20/26-lead plastic surface-mount SOJ package (DJ suffix). Both packages are characterized for  
operation from 0°C to 70°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
EPIC is a trademark of Texas Instruments Incorporated.  
Copyright 1996, Texas Instruments Incorporated  
ADVANCE INFORMATION concerns new products in the sampling or  
preproduction phase of development. Characteristic data and other  
specifications are subject to change without notice.  
1
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443  
1234567...25

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与TMS44400-60DM相关器件

型号 品牌 获取价格 描述 数据表
TMS44400-60SD TI

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 		1MX4 FAST PAGE DRAM, 60ns, PZIP20, PLASTIC, ZIP-20
TMS44400-70DJ TI

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 		1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES
TMS44400-70DM TI

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 		1MX4 FAST PAGE DRAM, 70ns, PDSO20, 0.350 INCH, PLASTIC, SOJ-26/20
TMS44400-70SD ETC

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 		x4 Fast Page Mode DRAM
TMS44400-80DGA TI

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 		1MX4 FAST PAGE DRAM, 80ns, PDSO20, PLASTIC, TSOP-26/20
TMS44400-80DJ TI

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 		1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES
TMS44400-80SD TI

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 		IC 1M X 4 FAST PAGE DRAM, 80 ns, PZIP20, PLASTIC, ZIP-20, Dynamic RAM
TMS44400DGA TI

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 		1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES
TMS44400DGA-60 TI

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 		1MX4 FAST PAGE DRAM, 60ns, PDSO20, PLASTIC, TSOP-26/20
TMS44400DGA-70 TI

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 		1MX4 FAST PAGE DRAM, 70ns, PDSO20, PLASTIC, TSOP-26/20

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