5秒后页面跳转
捷配首页

Datasheet > TMS44400DGA-60
TMS44400DGA-60 PDF预览

TMS44400DGA-60

更新时间： 2024-11-11 20:07:15
品牌 Logo 应用领域
德州仪器 - TI 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
25页 451K
描述
1MX4 FAST PAGE DRAM, 60ns, PDSO20, PLASTIC, TSOP-26/20

阅读下载

中文翻译

获取价格

TMS44400DGA-60 技术参数

生命周期：Obsolete零件包装代码：TSOP
包装说明：TSOP2,针数：20
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.02风险等级：5.42
访问模式：FAST PAGE最长访问时间：60 ns
其他特性：CAS BEFORE RASJESD-30 代码：R-PDSO-G20
长度：17.14 mm内存密度：4194304 bit
内存集成电路类型：FAST PAGE DRAM内存宽度：4
功能数量：1端口数量：1
端子数量：20字数：1048576 words
字数代码：1000000工作模式：ASYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：1MX4封装主体材料：PLASTIC/EPOXY
封装代码：TSOP2封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE认证状态：Not Qualified
座面最大高度：1.2 mm最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
宽度：7.62 mmBase Number Matches：1

TMS44400DGA-60 数据手册

 浏览型号TMS44400DGA-60的Datasheet PDF文件第2页浏览型号TMS44400DGA-60的Datasheet PDF文件第3页浏览型号TMS44400DGA-60的Datasheet PDF文件第4页浏览型号TMS44400DGA-60的Datasheet PDF文件第5页浏览型号TMS44400DGA-60的Datasheet PDF文件第6页浏览型号TMS44400DGA-60的Datasheet PDF文件第7页 
TMS44400, TMS44400P, TMS46400, TMS46400P  
1048576-WORD BY 4-BIT  
DYNAMIC RANDOM-ACCESS MEMORIES  
SMHS562C – MAY 1995 – REVISED NOVEMBER 1996  
DGA PACKAGE  
(TOP VIEW)  
DJ PACKAGE  
(TOP VIEW)  
Organization . . . 1048576 × 4  
Single 5-V Power Supply for TMS44400/P  
(±10% Tolerance)  
DQ1  
DQ2  
W
RAS  
A9  
1
2
3
4
5
26  
25  
24  
23  
22  
V
DQ1  
DQ2  
W
RAS  
A9  
1
2
3
4
5
26  
25  
24  
23  
22  
V
SS  
SS  
Single 3.3-V Power Supply for TMS46400/P  
(±10% Tolerance)  
DQ4  
DQ3  
CAS  
OE  
DQ4  
DQ3  
CAS  
OE  
Low Power Dissipation (TMS46400P only)  
200-µA CMOS Standby  
200-µA Self Refresh  
300-µA Extended-Refresh Battery  
Backup  
A0  
A1  
A2  
A3  
9
18  
17  
16  
15  
14  
A8  
A7  
A6  
A5  
A4  
A0  
A1  
A2  
A3  
9
18  
17  
16  
15  
14  
A8  
A7  
A6  
A5  
A4  
10  
11  
12  
13  
10  
11  
12  
13  
Performance Ranges:  
ACCESS ACCESS ACCESS  
TIME TIME TIME OR WRITE  
(t (t  
READ  
V
V
CC  
CC  
)
)
(t  
AA  
)
CYCLE  
(MIN)  
RAC CAC  
(MAX)  
60 ns  
70 ns  
80 ns  
(MAX)  
15 ns  
18 ns  
20 ns  
(MAX)  
30 ns  
35 ns  
40 ns  
’4x400/P-60  
’4x400/P-70  
’4x400/P-80  
110 ns  
130 ns  
150 ns  
PIN NOMENCLATURE  
A0–A9  
CAS  
Address Inputs  
Column-Address Strobe  
Data In  
Enhanced Page-Mode Operation for Faster  
Memory Access  
DQ1–DQ4  
OE  
Output Enable  
Row-Address Strobe  
5-V or 3.3-V Supply  
Ground  
CAS-Before-RAS (CBR) Refresh  
RAS  
V
V
CC  
Long Refresh Period  
SS  
1024-Cycle Refresh in 16 ms  
128 ms (MAX) for Low-Power,  
Self-Refresh Version (TMS4x400P)  
W
Write Enable  
3-State Unlatched Output  
Operating Free-Air Temperature Range  
0°C to 70°C  
Texas Instruments EPIC CMOS Process  
description  
AVAILABLE OPTIONS  
SELF-REFRESH  
The TMS4x400 series is a set of high-speed,  
4194304-bit dynamic random-access memories  
(DRAMs), organized as 1048576 words of four  
bits each. The TMS4x400P series is a set of  
high-speed,  
extended-refresh,  
POWER  
SUPPLY  
REFRESH  
CYCLES  
DEVICE  
BATTERY  
BACKUP  
TMS44400  
TMS44400P  
TMS46400  
TMS46400P  
5 V  
5 V  
—
Yes  
—
1024 in 16 ms  
low-power,  
self-refresh  
with  
1024 in 128 ms  
1024 in 16 ms  
1024 in 128 ms  
4194304-bit  
DRAMs,  
3.3 V  
3.3 V  
organized as 1048576 words of four bits each.  
Both series employ state-of-the-art enhanced  
Yes  
performance  
technology for high performance, reliability, and  
low power.  
implanted  
CMOS  
(EPIC )  
These devices feature maximum RAS access times of 60 ns, 70 ns, and 80 ns. All addresses and data-in lines  
are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility.  
TheTMS4x400andTMS4x400Pareofferedina20/26-leadplasticsmall-outline(TSOP)package(DGAsuffix)  
and a 300-mil 20/26-lead plastic surface-mount SOJ package (DJ suffix). Both packages are characterized for  
operation from 0°C to 70°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
EPIC is a trademark of Texas Instruments Incorporated.  
Copyright 1996, Texas Instruments Incorporated  
ADVANCE INFORMATION concerns new products in the sampling or  
preproduction phase of development. Characteristic data and other  
specifications are subject to change without notice.  
1
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443  
1234567...25

中文翻译

下载PDF

与TMS44400DGA-60相关器件

型号 品牌 获取价格 描述 数据表
TMS44400DGA-70 TI

获取价格

 		1MX4 FAST PAGE DRAM, 70ns, PDSO20, PLASTIC, TSOP-26/20
TMS44400DJ TI

获取价格

 		1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES
TMS44400DJ-60 TI

获取价格

 		1MX4 FAST PAGE DRAM, 60ns, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20
TMS44400DJ-70 TI

获取价格

 		1MX4 FAST PAGE DRAM, 70ns, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20
TMS44400DJ-80 TI

获取价格

 		1MX4 FAST PAGE DRAM, 80ns, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20
TMS44400P TI

获取价格

 		1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES
TMS44400P-60DJ TI

获取价格

 		1MX4 FAST PAGE DRAM, 60ns, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20
TMS44400P-70DJ TI

获取价格

 		1MX4 FAST PAGE DRAM, 70ns, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20
TMS44400P-70SD TI

获取价格

 		1MX4 FAST PAGE DRAM, 70ns, PZIP20, PLASTIC, ZIP-20
TMS44400P-80DGA TI

获取价格

 		1MX4 FAST PAGE DRAM, 80ns, PDSO20, PLASTIC, TSOP-26/20

与TMS44400DGA-60相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证