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TMMBAT41 PDF预览

TMMBAT41

更新时间: 2024-10-01 22:19:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管小信号肖特基二极管
页数 文件大小 规格书
4页 57K
描述
SMALL SIGNAL SCHOTTKY DIODE

TMMBAT41 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:MELF
包装说明:GLASS, MINIMELF-2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.72
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:O-LELF-R2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:0.75 A
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-65 °C
最大输出电流:0.1 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):235最大功率耗散:0.1 W
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向电流:0.1 µA子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn) - annealed端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:30
Base Number Matches:1

TMMBAT41 数据手册

 浏览型号TMMBAT41的Datasheet PDF文件第2页浏览型号TMMBAT41的Datasheet PDF文件第3页浏览型号TMMBAT41的Datasheet PDF文件第4页 
TMMBAT 41  
®
SMALL SIGNAL SCHOTTKY DIODE  
DESCRIPTION  
General purpose metal to silicon diode featuring  
very low turn-on voltage and fast switching.  
This device has integrated protection against ex-  
cessive voltage such as electrostatic discharges.  
MINIMELF  
(Glass)  
ABSOLUTE RATINGS (limiting values)  
Symbol  
VRRM  
IF  
Parameter  
Repetitive Peak Reverse Voltage  
Value  
Unit  
V
100  
100  
350  
Forward Continuous Current  
mA  
mA  
T = 25 C  
°
i
IFRM  
Repetitive Peak Forward Current  
tp 1s  
0.5  
δ ≤  
tp = 10ms  
T = 95 C  
IFSM  
Ptot  
Surge non Repetitive Forward Current  
Power Dissipation  
750  
100  
mA  
mW  
°
i
Tstg  
Tj  
Storage and Junction Temperature Range  
- 65 to + 150  
- 65 to + 125  
C
°
C
°
TL  
Maximum Temperature for Soldering during 15s  
260  
C
°
THERMAL RESISTANCE  
Symbol  
Test Conditions  
Value  
Unit  
C/W  
Rth(j-l)  
Junction-leads  
300  
°
ELECTRICAL CHARACTERISTICS  
STATIC CHARACTERISTICS  
Symbol  
VBR  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
100  
T = 25 C  
I = 100 A  
°
µ
j
R
VF*  
0.4  
0.45  
1
V
T = 25 C  
IF = 1mA  
°
j
T = 25 C  
IF = 200mA  
°
j
IR*  
VR = 50V  
0.1  
20  
T = 25 C  
A
µ
°
j
T = 100 C  
°
j
DYNAMIC CHARACTERISTICS  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
C
2
pF  
Tj = 25°C  
VR = 1V  
f = 1MHz  
* Pulse test: tp 300µs δ < 2%.  
August 1999 Ed: 1A  
1/4  

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