TMMBAT41FILM

更新时间： 2024-10-02 13:14:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		整流二极管小信号肖特基二极管
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TMMBAT41FILM 数据手册

TMMBAT 41

SMALL SIGNAL SCHOTTKY DIODE

DESCRIPTION

General purpose metal to silicon diode featuring

very low turn-on voltage and fast switching.

This device has integrated protection against ex-

cessive voltage such as electrostatic discharges.

MINIMELF

(Glass)

ABSOLUTE RATINGS (limiting values)

Symbol

V_RRM

I_F

Parameter

Repetitive Peak Reverse Voltage

Value

Unit

100

350

Forward Continuous Current

T = 25 C

I_FRM

Repetitive Peak Forward Current

t_p1s

≤

0.5

δ ≤

t_p= 10ms

T = 95 C

I_FSM

P_tot

Surge non Repetitive Forward Current

Power Dissipation

750

100

T_stg

T_j

Storage and Junction Temperature Range

- 65 to + 150

- 65 to + 125

T_L

Maximum Temperature for Soldering during 15s

260

THERMAL RESISTANCE

Symbol

Test Conditions

Value

Unit

C/W

R_th(j-l)

Junction-leads

300

ELECTRICAL CHARACTERISTICS

STATIC CHARACTERISTICS

Symbol

V_BR

Test Conditions

Min.

Typ.

Max.

Unit

100

T = 25 C

I = 100 A

V_F*

0.4

0.45

T = 25 C

I_F= 1mA

T = 25 C

I_F= 200mA

I_R*

V_R= 50V

0.1

T = 25 C

T = 100 C

DYNAMIC CHARACTERISTICS

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

T_j= 25°C

V_R= 1V

f = 1MHz

* Pulse test: t_p≤ 300µs δ < 2%.

August 1999 Ed: 1A

1/4

12 3 4

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TMMBAT41FILM 替代型号

型号	品牌	替代类型	描述	数据表
LL41-GS08	VISHAY	功能相似	Small Signal Schottky Diode

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