TM124BBJ32F, TM124BBJ32U 1048576 BY 32-BIT DYNAMIC RAM MODULE
TM248CBJ32F, TM248CBJ32U 2097152 BY 32-BIT DYNAMIC RAM MODULE
SMMS661 – JANUARY 1996
• Organization
TM124BBJ32F . . . 1 048 576 × 32
TM248CBJ32F . . . 2 097 152 × 32
• Presence Detect
• Performance Ranges:
ACCESS ACCESS ACCESS READ
TIME
TIME
TIME
OR
• Single 5-V Power Supply (±10% Tolerance)
t
t
t
WRITE
CYCLE
(MIN)
RAC
AA
CAC
• 72-Pin Single In-Line Memory Module
(SIMM) for Use With Socket
(MAX)
’124BBJ32F-60 60 ns
’124BBJ32F-70 70 ns
’124BBJ32F-80 80 ns
’248CBJ32F-60 60 ns
’248CBJ32F-70 70 ns
’248CBJ32F-80 80 ns
(MAX)
30 ns
35 ns
40 ns
30 ns
35 ns
40 ns
(MAX)
15 ns
18 ns
20 ns
15 ns
18 ns
20 ns
110 ns
130 ns
150 ns
110 ns
130 ns
150 ns
• TM124BBJ32F – Utilizes Two 16-Megabit
DRAMs in Plastic Small-Outline J-Lead
(SOJ) Packages
• TM248CBJ32F – Utilizes Four 16-Megabit
DRAMs in Plastic Small-Outline J-Lead
(SOJ) Packages
• Low Power Dissipation
• Long Refresh Period
• Operating Free-Air Temperature Range
16 ms (1024 Cycles)
0°C to 70°C
• All Inputs, Outputs, Clocks Fully
†
• Gold-Tabbed Versions Available:
TTL-Compatible
TM124BBJ32F
TM248CBJ32F
• 3-State Output
• Common CAS Control for Eight Common
• Tin-Lead (Solder) Tabbed Versions
Available:
Data-In and Data-Out Lines in Four Blocks
• Enhanced Page-Mode Operation With
CAS-Before-RAS (CBR), RAS-Only, and
Hidden Refresh
TM124BBJ32U
TM248CBJ32U
description
TM124BBJ32F
The TM124BBJ32F is a 4-MByte dynamic random-access memory (DRAM) organized as four times
1048576 × 8 in a 72-pin SIMM. The SIMM is composed of two TMS418160DZ, 1 048 576 × 16-bit DRAMs, each
in a 42-lead plastic SOJ package mounted on a substrate with decoupling capacitors. The TMS418160DZ is
described in the TMS418160 data sheet. The TM124BBJ32F SIMM is available in the single-sided BJ-leadless
module for use with sockets.
TM248CBJ32F
The TM248CBJ32F is an 8-MByte DRAM organized as four times 2 097 152 × 8 in a 72-pin SIMM. The SIMM
is composed of four TMS418160DZ, 1048576 × 16-bitDRAMs, eachina42-leadplasticSOJpackagemounted
on a substrate with decoupling capacitors. The TMS418160DZ is described in the TMS418160 data sheet. The
TM248CBJ32F SIMM is available in the double-sided BJ-leadless module for use with sockets.
operation
The TM124BBJ32F operates as two TMS418160DZs connected as shown in the functional block diagram and
Table 1. The TM248CBJ32F operates as four TMS418160DZs connected as shown in the functional block
diagram and Table 1. The common I/O feature dictates the use of early-write cycles to prevent contention on
D and Q.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
†
Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.
Copyright 1996, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
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