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TM124BBJ32F-70 PDF预览

TM124BBJ32F-70

更新时间： 2024-11-17 22:27:19
品牌 Logo 应用领域
德州仪器 - TI 存储内存集成电路动态存储器
页数 文件大小 规格书
10页 145K
描述
32-BIT DYNAMIC RAM MODULE

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中文翻译

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TM124BBJ32F-70 技术参数

生命周期：Obsolete零件包装代码：SIMM
包装说明：SIMM-72针数：72
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.02风险等级：5.84
Is Samacsys：N访问模式：FAST PAGE
最长访问时间：70 ns其他特性：RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型：COMMONJESD-30 代码：R-XSMA-N72
内存密度：33554432 bit内存集成电路类型：FAST PAGE DRAM MODULE
内存宽度：32功能数量：1
端口数量：1端子数量：72
字数：1048576 words字数代码：1000000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：1MX32
输出特性：3-STATE封装主体材料：UNSPECIFIED
封装代码：SIMM封装等效代码：SSIM72
封装形状：RECTANGULAR封装形式：MICROELECTRONIC ASSEMBLY
电源：5 V认证状态：Not Qualified
刷新周期：1024座面最大高度：17.78 mm
自我刷新：NO最大待机电流：0.002 A
子类别：DRAMs最大压摆率：0.36 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：NO
技术：CMOS温度等级：COMMERCIAL
端子形式：NO LEAD端子节距：1.27 mm
端子位置：SINGLEBase Number Matches：1

TM124BBJ32F-70 数据手册

 浏览型号TM124BBJ32F-70的Datasheet PDF文件第2页浏览型号TM124BBJ32F-70的Datasheet PDF文件第3页浏览型号TM124BBJ32F-70的Datasheet PDF文件第4页浏览型号TM124BBJ32F-70的Datasheet PDF文件第5页浏览型号TM124BBJ32F-70的Datasheet PDF文件第6页浏览型号TM124BBJ32F-70的Datasheet PDF文件第7页 
TM124BBJ32F, TM124BBJ32U 1048576 BY 32-BIT DYNAMIC RAM MODULE  
TM248CBJ32F, TM248CBJ32U 2097152 BY 32-BIT DYNAMIC RAM MODULE  
SMMS661 – JANUARY 1996  
• Organization  
TM124BBJ32F . . . 1 048 576 × 32  
TM248CBJ32F . . . 2 097 152 × 32  
• Presence Detect  
• Performance Ranges:  
ACCESS ACCESS ACCESS READ  
TIME  
TIME  
TIME  
OR  
• Single 5-V Power Supply (±10% Tolerance)  
t
t
t
WRITE  
CYCLE  
(MIN)  
RAC  
AA  
CAC  
• 72-Pin Single In-Line Memory Module  
(SIMM) for Use With Socket  
(MAX)  
’124BBJ32F-60 60 ns  
’124BBJ32F-70 70 ns  
’124BBJ32F-80 80 ns  
’248CBJ32F-60 60 ns  
’248CBJ32F-70 70 ns  
’248CBJ32F-80 80 ns  
(MAX)  
30 ns  
35 ns  
40 ns  
30 ns  
35 ns  
40 ns  
(MAX)  
15 ns  
18 ns  
20 ns  
15 ns  
18 ns  
20 ns  
110 ns  
130 ns  
150 ns  
110 ns  
130 ns  
150 ns  
• TM124BBJ32F – Utilizes Two 16-Megabit  
DRAMs in Plastic Small-Outline J-Lead  
(SOJ) Packages  
• TM248CBJ32F – Utilizes Four 16-Megabit  
DRAMs in Plastic Small-Outline J-Lead  
(SOJ) Packages  
• Low Power Dissipation  
• Long Refresh Period  
• Operating Free-Air Temperature Range  
16 ms (1024 Cycles)  
0°C to 70°C  
• All Inputs, Outputs, Clocks Fully  
†
• Gold-Tabbed Versions Available:  
TTL-Compatible  
TM124BBJ32F  
TM248CBJ32F  
• 3-State Output  
• Common CAS Control for Eight Common  
• Tin-Lead (Solder) Tabbed Versions  
Available:  
Data-In and Data-Out Lines in Four Blocks  
• Enhanced Page-Mode Operation With  
CAS-Before-RAS (CBR), RAS-Only, and  
Hidden Refresh  
TM124BBJ32U  
TM248CBJ32U  
description  
TM124BBJ32F  
The TM124BBJ32F is a 4-MByte dynamic random-access memory (DRAM) organized as four times  
1048576 × 8 in a 72-pin SIMM. The SIMM is composed of two TMS418160DZ, 1 048 576 × 16-bit DRAMs, each  
in a 42-lead plastic SOJ package mounted on a substrate with decoupling capacitors. The TMS418160DZ is  
described in the TMS418160 data sheet. The TM124BBJ32F SIMM is available in the single-sided BJ-leadless  
module for use with sockets.  
TM248CBJ32F  
The TM248CBJ32F is an 8-MByte DRAM organized as four times 2 097 152 × 8 in a 72-pin SIMM. The SIMM  
is composed of four TMS418160DZ, 1048576 × 16-bitDRAMs, eachina42-leadplasticSOJpackagemounted  
on a substrate with decoupling capacitors. The TMS418160DZ is described in the TMS418160 data sheet. The  
TM248CBJ32F SIMM is available in the double-sided BJ-leadless module for use with sockets.  
operation  
The TM124BBJ32F operates as two TMS418160DZs connected as shown in the functional block diagram and  
Table 1. The TM248CBJ32F operates as four TMS418160DZs connected as shown in the functional block  
diagram and Table 1. The common I/O feature dictates the use of early-write cycles to prevent contention on  
D and Q.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
†
Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.  
Copyright 1996, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443  
1234567...10

中文翻译

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与TM124BBJ32F-70相关器件

型号 品牌 获取价格 描述 数据表
TM124BBJ32F-70L TI

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 		1MX32 FAST PAGE DRAM MODULE, 70ns, SMA72, SIMM-72
TM124BBJ32F-80 TI

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 		32-BIT DYNAMIC RAM MODULE
TM124BBJ32F-80L TI

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 		1MX32 FAST PAGE DRAM MODULE, 80ns, SMA72, SIMM-72
TM124BBJ32U TI

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 		32-BIT DYNAMIC RAM MODULE
TM124BBJ32U-60 TI

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 		32-BIT DYNAMIC RAM MODULE
TM124BBJ32U-60L TI

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 		1MX32 FAST PAGE DRAM MODULE, 60ns, SMA72, SIMM-72
TM124BBJ32U-70 TI

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 		32-BIT DYNAMIC RAM MODULE
TM124BBJ32U-70L TI

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 		1MX32 FAST PAGE DRAM MODULE, 70ns, SMA72, SIMM-72
TM124BBJ32U-80 TI

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 		32-BIT DYNAMIC RAM MODULE
TM124BBJ32U-80L TI

获取价格

 		1MX32 FAST PAGE DRAM MODULE, 80ns, SMA72, SIMM-72

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