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TLC2801ZDR PDF预览

TLC2801ZDR

更新时间： 2024-11-29 21:16:19
品牌 Logo 应用领域
德州仪器 - TI 放大器光电二极管
页数 文件大小 规格书
13页 194K
描述
OP-AMP, 1500uV OFFSET-MAX, 1.9MHz BAND WIDTH, PDSO8, SO-8

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中文翻译

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TLC2801ZDR 技术参数

生命周期：Obsolete零件包装代码：SOIC
包装说明：SO-8针数：8
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.33.00.01风险等级：5.82
放大器类型：OPERATIONAL AMPLIFIER最大平均偏置电流 (IIB)：0.03 µA
最小共模抑制比：85 dB标称共模抑制比：115 dB
最大输入失调电压：1500 µVJESD-30 代码：R-PDSO-G8
长度：4.9 mm负供电电压上限：-8 V
标称负供电电压 (Vsup)：-5 V功能数量：1
端子数量：8最高工作温度：150 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装形状：RECTANGULAR
封装形式：SMALL OUTLINE认证状态：Not Qualified
座面最大高度：1.75 mm最小摆率：1 V/us
标称压摆率：2.7 V/us最大压摆率：1.5 mA
供电电压上限：8 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：AUTOMOTIVE端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
标称均一增益带宽：1900 kHz最小电压增益：15000
宽度：3.9 mmBase Number Matches：1

TLC2801ZDR 数据手册

 浏览型号TLC2801ZDR的Datasheet PDF文件第2页浏览型号TLC2801ZDR的Datasheet PDF文件第3页浏览型号TLC2801ZDR的Datasheet PDF文件第4页浏览型号TLC2801ZDR的Datasheet PDF文件第5页浏览型号TLC2801ZDR的Datasheet PDF文件第6页浏览型号TLC2801ZDR的Datasheet PDF文件第7页 
TLC2801Z, TLC2801Y  
Advanced LinCMOS LOW-NOISE PRECISION  
OPERATIONAL AMPLIFIERS  
SLOS116B – JULY 1982 – REVISED SEPTEMBER 1996  
Low Input Noise Voltage:  
35 nV/√Hz Max at f = 10 Hz  
15 nV/√Hz Max at f = 1 kHz  
Low Input Bias Current:  
1 pA Typ at T = 25°C  
A
250 pA Typ at T = 150°C  
A
Low Input Offset Voltage:  
Specified for Both Single-Supply and  
Split-Supply Operation  
500 µV Max at T = 25°C  
A
1.5 mV Max at T = Full Range  
A
Common-Mode Input Voltage Range  
Includes the Negative Rail  
Excellent Offset Voltage Stability With  
Temperature . . . 4 µV/°C Typ  
D OR P PACKAGE  
(TOP VIEW)  
description  
The TLC2801 is  
a
precision, low-noise  
NC  
1IN–  
1IN+  
/GND  
NC  
V
1
2
3
4
8
7
6
5
operational amplifier manufactured using Texas  
Instruments Advanced LinCMOS process. The  
TLC2801 combines the noise performance of the  
lowest-noiseJFET amplifiers with the dcprecision  
available previously only in bipolar amplifiers. The  
Advanced LinCMOS process uses silicon-gate  
technology to obtain input offset voltage stability  
with temperature and time that far exceeds that  
obtainable using metal-gate technology. In  
addition, this technology makes possible input  
impedance levels that meet or exceed levels  
offered by top-gate JFET and expensive  
dielectric-isolated devices.  
DD+  
OUT  
NC  
V
DD–  
NC – No internal connection  
LARGE-SIGNAL DIFFERENTIAL  
VOLTAGE AMPLIFICATION  
vs  
FREE-AIR TEMPERATURE  
130  
120  
The combination of excellent dc and noise  
performance with a common-mode input voltage  
range that includes the negative rail makes the  
TLC2801 an ideal choice for high-impedance,  
low-level signal conditioning applications in either  
single-supply or split-supply configurations.  
V
= ±5 V, R = 500 kΩ  
L
DD±  
110  
100  
V
= ±5 V, R = 10 kΩ  
DD±  
L
The device inputs and output are designed to  
withstand –100-mA surge currents without  
sustaining latch-up. In addition, internal ESD-  
protection circuits prevent functional failures at  
voltages up to 2000 V as tested under  
MIL-STD-883C, Method 3015.2; however, care  
should be exercised in handling these devices as  
exposure to ESD may result in degradation of the  
device parametric performance.  
90  
80  
–50 –25  
0
25  
50  
75 100 125 150  
T
A
– Free-Air Temperature – °C  
The TLC2801 is characterized for operation over  
the temperature range of –40°C to 150°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Advanced LinCMOS is a trademark of Texas Instruments Incorporated.  
Copyright 1996, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
3–1  
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...13

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