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TLC2810 PDF预览

TLC2810

更新时间: 2024-11-29 12:22:27
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德州仪器 - TI 运算放大器
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23页 336K
描述
LinCMOSE PRECISION DUAL OPERATIONAL AMPLIFIERS

TLC2810 数据手册

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TLC2810Z, TLC2810Y  
LinCMOS PRECISION  
DUAL OPERATIONAL AMPLIFIERS  
SLOS120A – AUGUST 1993 – REVISED AUGUST 1994  
Trimmed Input Offset Voltage:  
10 mV Max at 25°C, V = 5 V  
Low Noise . . . 25 nV/Hz Typ at f = 1 kHz  
DD  
Output Voltage Range Includes Negative  
Rail  
Input Offset Voltage Drift Typically  
0.1 µV/Month, Including the First 30 Days  
12  
High Input Impedance . . . 10 Typ  
Wide Range of Supply Voltages Over  
Specified Temperature Range:  
40°C to 150°C . . . 4 V to 16 V  
ESD-Protection Circuitry  
Small-Outline Package Option Also  
Available in Tape and Reel  
Single-Supply Operation  
Designed-In Latch-Up Immunity  
Common-Mode Input Voltage Range  
Extends to the Negative Rail  
D OR P PACKAGE  
(TOP VIEW)  
description  
1OUT  
1IN–  
1IN+  
GND  
V
DD  
1
2
3
4
8
7
6
5
The TLC2810Z dual operational amplifiers  
combine low offset voltage drift with high input  
impedance, low noise, and speeds approaching  
that ofgeneral-purposeJFETdevices. Inaddition,  
the use of Texas Instruments silicon-gate  
LinCMOS technology assures offset stability that  
greatly exceeds the stability available with  
conventional metal-gate processes.  
2OUT  
2IN–  
2IN+  
The high input impedance, low bias current, and high slew rate make the TLC2810Z ideal for applications that  
have previously been reserved for JFET and NFET products. These advantages, in combination with an upper  
operating temperature of 150°C, make the TLC2810Z an ideal choice for precision, extremely high-temperature  
applications.  
In general, many features associated with bipolar technology are available on the TLC2810Z without the power  
penalties of bipolar technology. General applications such as transducer interfacing, analog calculations,  
amplifier blocks, active filters, and signal buffering are designed easily with the TLC2810Z.  
The TLC2810Z package options include a small-outline version for high-density system applications.  
The device inputs and outputs are designed to withstand 100-mA surge currents without sustaining latch-up  
at 25°C. The TLC2810Z incorporates internal ESD-protection circuits that prevent functional failures atvoltages  
up to 2000 V as tested under MIL-STD 883C, Method 3015.2. However, care should be exercised in handling  
the TLC2810Z as exposure to ESD may result in the degradation of the device parametric performance.  
Additional care should be exercised to prevent V  
supply line transients under power conditions. Transients  
DD  
of greater than 20 V can trigger the ESD-protection structure, inducing a low-impedance path to GND. Should  
this condition occur, the sustained current supplied to the device must be limited to 100 mA or less. Failure to  
do so can result in a latched condition and device failure.  
The TLC2810Z is characterized for operation over the extended temperature range from 40°C to 150°C.  
AVAILABLE OPTIONS  
PACKAGED DEVICES  
SMALL OUTLINE PLASTIC DIP  
CHIP  
FORM  
(Y)  
T
A
(D)  
(P)  
40°C to 150°C  
TLC2810ZD  
TLC2810ZP  
TLC2810Y  
The D packages are available taped and reeled. Add R suffix to the device type when  
ordering (e.g., TLC2810ZDR).  
LinCMOS is a trademark of Texas Instruments Incorporated.  
Copyright 1994, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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