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TLC2872ZP PDF预览

TLC2872ZP

更新时间： 2024-11-29 13:01:55
品牌 Logo 应用领域
德州仪器 - TI 运算放大器
页数 文件大小 规格书
17页 260K
描述
Dual Low-Noise High Temperature Operational Amplifier 8-PDIP

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中文翻译

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TLC2872ZP 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：DIP
包装说明：DIP, DIP8,.3针数：8
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8542.33.00.01风险等级：5.24
放大器类型：OPERATIONAL AMPLIFIER架构：VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)：0.005 µA最小共模抑制比：70 dB
标称共模抑制比：75 dB频率补偿：YES
最大输入失调电压：3000 µVJESD-30 代码：R-PDIP-T8
长度：9.81 mm低-偏置：YES
低-失调：NO微功率：NO
负供电电压上限：-8 V功能数量：2
端子数量：8最高工作温度：150 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装代码：DIP封装等效代码：DIP8,.3
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：NOT SPECIFIED功率：NO
电源：5/+-5 V可编程功率：NO
认证状态：Not Qualified座面最大高度：5.08 mm
最小摆率：1.1 V/us标称压摆率：3.6 V/us
子类别：Operational Amplifier最大压摆率：3 mA
供电电压上限：8 V标称供电电压 (Vsup)：5 V
表面贴装：NO技术：CMOS
温度等级：AUTOMOTIVE端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED标称均一增益带宽：2180 kHz
最小电压增益：10000宽带：NO
宽度：7.62 mmBase Number Matches：1

TLC2872ZP 数据手册

 浏览型号TLC2872ZP的Datasheet PDF文件第2页浏览型号TLC2872ZP的Datasheet PDF文件第3页浏览型号TLC2872ZP的Datasheet PDF文件第4页浏览型号TLC2872ZP的Datasheet PDF文件第5页浏览型号TLC2872ZP的Datasheet PDF文件第6页浏览型号TLC2872ZP的Datasheet PDF文件第7页 
TLC2872Z, TLC2872Y  
Advanced LinCMOS RAIL-TO-RAIL  
DUAL OPERATIONAL AMPLIFIERS  
SLOS117 – OCTOBER 1992  
D OR P PACKAGE  
(TOP VIEW)  
Free-Air Operating Temperature  
–40°C to 150°C  
Output Swing Includes Both Supply Rails  
Low Noise . . . 9 nV/√Hz Typ at f = 1 kHz  
Low Input Bias Current . . . 1 pA Typ  
1OUT  
1IN–  
1IN+  
/GND  
V
DD+  
1
2
3
4
8
7
6
5
2OUT  
2IN–  
2IN+  
V
DD–  
Common-Mode Input Voltage Range  
Includes Negative Rail  
High Unity-Gain Bandwidth . . . 2.2 MHz Typ  
High Slew Rate . . . 3.6 V/µs Typ  
Low Input Offset Voltage  
MAXIMUM OUTPUT VOLTAGE  
vs  
SUPPLY VOLTAGE  
16  
14  
12  
10  
8
300 µV Typ at T = 25°C  
A
T
V
= 25°C  
= V /2  
DD  
A
O
Macromodel Included  
description  
The TLC2872Z is a dual rail-to-rail output  
operational amplifier manufactured using Texas  
I
O
= 50 µA  
Instruments Advanced LinCMOS  
process.  
These devices offer comparable ac performance  
while having better noise, input offset voltage  
and power dissipation than existing CMOS  
operational amplifiers. In addition, the common-  
mode input voltage range is wider than typical  
standard CMOS type amplifiers. To take  
advantage of this improvement in performance,  
making this device available for a wider range of  
I
= 500 µA  
O
6
4
applications, V  
is specified with a larger  
ICR  
4
6
8
10  
12  
14  
16  
maximum input offset voltage test limit of ±5 mV.  
The Advanced LinCMOS process uses a  
V
DD  
– Supply Voltage – V  
silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that  
obtainable using metal-gate technology. Also, this technology makes possible input impedance levels that meet  
or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.  
The TLC2872Z, manufactured using Texas Instruments high-temperature process flow, allows extended  
temperature operation up to 150°C in a plastic package. This adds extra reliability at the extended temperature  
and reduces the need for expensive hermetically sealed ceramic packages.  
The TLC2872Z, which exhibits high input impedance and low noise, is excellent for small signal conditioning  
of high impedance sources, such as piezoelectric transducers. In addition, the rail-to-rail output feature with  
single or split supplies makes this device a great choice for inputs to ADCs in either the unipolar or bipolar mode  
of operation. This feature, combined with its temperature performance, makes the TLC2872Z ideal for  
sonobuoys, pressure sensors, temperature controls, active VR sensors, accelerometers, and many other  
applications.  
AVAILABLE OPTIONS  
PACKAGED DEVICES  
V
max  
CHIP FORM  
(Y)  
IO  
T
A
SMALL OUTLINE  
(D)  
PLASTIC DIP  
(P)  
AT 25°C  
–40°C to 150°C  
2.5 mV  
TLC2872ZD  
TLC2872ZP  
TLC2872Y  
The D packages are available taped and reeled. Add R suffix to device type (e.g., TLC2872DR).  
Advanced LinCMOS is a trademark of Texas Instruments Incorporated.  
Copyright 1992, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...17

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