Datasheet > TK12X53D(TE24L,Q)

TK12X53D(TE24L,Q)

更新时间： 2024-10-02 19:51:51

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	188K
描述
TRANSISTOR,MOSFET,N-CHANNEL,525V V(BR)DSS,12A I(D),SC-97

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

TK12X53D(TE24L,Q) 技术参数

是否Rohs认证：	符合	生命周期：	End Of Life
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.76	配置：	Single
最大漏极电流 (Abs) (ID)：	12 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	150 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

TK12X53D(TE24L,Q) 数据手册

浏览型号TK12X53D(TE24L,Q)的Datasheet PDF文件第2页

浏览型号TK12X53D(TE24L,Q)的Datasheet PDF文件第3页

浏览型号TK12X53D(TE24L,Q)的Datasheet PDF文件第4页

TK12X53D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

TK12X53D

Switching Regulator Applications

Unit: mm

9.2 MAX.

7.0 ± 0.2

0.4 ± 0.1

•

Low drain-source ON resistance: R

High forward transfer admittance: ⎪Y ⎪ = 6.0 S (typ.)

= 0.5 Ω (typ.)

DS (ON)

Low leakage current: I

= 10 μA (max) (V

= 525 V)

DSS

Enhancement-mode: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

2.0 1.5 2.0 2.5

Characteristics

Drain-source voltage

Symbol

Rating

Unit

525

±30

DSS

Gate-source voltage

3.6 ± 0.2

GSS

1.0 ± 0.2 1.0 ± 0.2

(Note 1)

Drain current

：G

1. GATE

2. N.C.

3. SOURCE

4. DRAIN

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

150

：S

：D

Single pulse avalanche energy

378

(Note 2)

JEDEC

⎯

Avalanche current

JEITA

SC-97

Repetitive avalanche energy (Note 3)

Channel temperature

°C

TOSHIBA

2-9F1C

150

Weight : 0.74 g (typ.)

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Internal Connection

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

0.833

°C/W

th (ch-c)

Note 1: Please use devices on conditions that the channel temperature is below 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 4.5 mH, R = 25 Ω, I = 12 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

2010-08-27

12 3 4 5 6

中文翻译

下载PDF

与TK12X53D(TE24L,Q)相关器件

型号	品牌	获取价格	描述	数据表
TK12X60U	TOSHIBA	获取价格	Switching Regulator Applications
TK12X60U9(TE24L,Q)	TOSHIBA	获取价格	TK12X60U9(TE24L,Q)
TK13052000J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
TK13053000J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
TK13054000J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
TK13056000J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
TK13058000J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block,
TK13059000J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
TK1305C000J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
TK1309	ALTECH	获取价格	POLYSTYRENE/ POLYCARBONATE ENCLOSURE TK 1309

与TK12X53D(TE24L,Q)相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

38
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

33
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

29
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

40

产品中心

服务支持

精选活动

关于我们

帮助中心

TK12X53D(TE24L,Q)

TK12X53D(TE24L,Q) 技术参数

TK12X53D(TE24L,Q) 数据手册

与TK12X53D(TE24L,Q)相关器件

与TK12X53D(TE24L,Q)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TK12X53D(TE24L,Q)

TK12X53D(TE24L,Q) 技术参数

TK12X53D(TE24L,Q) 数据手册

与TK12X53D(TE24L,Q)相关器件

与TK12X53D(TE24L,Q)相关文章

您还可以找

您在本页遇到什么问题？