Datasheet > TK13P25D

TK13P25D

更新时间： 2024-11-25 12:24:23

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飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
8页	264K
描述
MOSFETs Silicon N-Channel MOS (Ï-MOSî²)

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TK13P25D 数据手册

TK13P25D

MOSFETs Silicon N-Channel MOS (π-MOS)

1. Applications

•

Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: R_DS(ON)= 0.19 Ω (typ.)

(2) Low leakage current: I_DSS= 10 µA (max) (V_DS= 250 V)

(3) Enhancement mode: V_th= 1.5 to 3.5 V (V_DS= 10 V, I_D= 1 mA)

3. Packaging and Internal Circuit

1: Gate (G)

2: Drain (D)

3: Source (S)

DPAK

4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified)

Characteristics

Symbol

V_DSS

Rating

250

Unit

Drain-source voltage

Gate-source voltage

V_GSS

±20

Drain current (DC)

Drain current (pulsed)

Power dissipation

(Note 1)

I_D

I_DP

P_D

150

(T_c= 25)

Single-pulse avalanche energy

Avalanche current

(Note 2)

(Note 3)

(Note 1)

E_AS

I_AR

I_DR

I_DRP

T_ch

Reverse drain current (DC)

Reverse drain current (pulsed)

Channel temperature



Storage temperature

T_stg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

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