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TISP7350H3SLLAS

更新时间： 2024-09-10 19:31:11
品牌 Logo 应用领域
伯恩斯 - BOURNS /
页数 文件大小 规格书
4页 176K
描述
Silicon Surge Protector, 350V V(BO) Max, 60A, ROHS COMPLIANT, SIP-3

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中文翻译

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TISP7350H3SLLAS 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：SIP包装说明：IN-LINE, R-PSIP-T3
针数：3Reach Compliance Code：unknown
HTS代码：8541.30.00.80风险等级：5.72
其他特性：UL RECOGNIZED最大转折电压：350 V
配置：STAR CONNECTED, 3 ELEMENTS最大断态直流电压：275 V
JESD-30 代码：R-PSIP-T3JESD-609代码：e3
通态非重复峰值电流：60 A元件数量：3
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
表面贴装：NO端子面层：Matte Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED触发设备类型：SILICON SURGE PROTECTOR
Base Number Matches：1

TISP7350H3SLLAS 数据手册

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TISP7350H3SLL  
TRIPLE ELEMENT  
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTOR  
TISP7350H3SLL Overvoltage Protector  
Simultaneous 500 A 2/10 GR-1089-CORE Rating  
3-SIP (Long Lead) Package (Top View)  
Simultaneous 100 A 10/1000 GR-1089-CORE Rating  
1
T
Ion-Implanted Breakdown Region  
- Precise and Stable Voltage  
G
R
2
3
Low Voltage Overshoot Under Surge  
VDRM  
V
V(BO)  
Device Name  
MDXXAZA  
V
TISP7350H3SLL  
275  
350  
Device Symbol  
Rated for International Surge Wave Shapes  
- Single and Simultaneous Impulses  
R
T
IPPSM  
Wave Shape  
Standard  
A
2/10  
8/20  
GR-1089-CORE  
IEC 61000-4-5  
TIA-968-A  
500  
350  
250  
10/160  
TIA-968-A  
10/700  
20
ITU-T K.20/21  
TIA-968-A  
10/560  
0  
10  
10/1000  
GR-1089RE  
G
SD-TISP7-001-a  
...........................................Recognized Component  
Description  
The TISP7350H3SLL limits overvoltages between the telephone line Ring and Tip conductors and Ground. Overvoltages are normally caused  
by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line.  
Each terminal pair, T-G, R-G and T-R, has a symmetrical voltage-triggered bidirectional thyristor protection characteristic. Overvoltages are  
initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage  
onstate. This low-voltage on-state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar  
holding current helps prevent d.c. latchup as the diverted current subsides.  
These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are  
virtually transparent to the system in normal operation. They are designed to voltage limit and withstand the listed international lightning surges  
in both polarities.  
How to Order  
Order As  
Device  
Package  
Carrier  
Marking Code Std. Qty.  
Tape & Ammo Pack  
TISP7350H3SLLAS  
2000  
SP7350H3  
TISP7350H3SLL 3-SIP (Long Lead)  
Tube  
TISP7350H3SLL-S  
1000  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
FEBRUARY 2005 - REVISED MAY 2007  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
1234

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