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TISP3150F3D PDF预览

TISP3150F3D

更新时间: 2024-11-05 14:45:11
品牌 Logo 应用领域
伯恩斯 - BOURNS 光电二极管
页数 文件大小 规格书
12页 504K
描述
Silicon Surge Protector, 150V V(BO) Max, 4A, SOP-8

TISP3150F3D 技术参数

生命周期:Active零件包装代码:SOIC
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.42
其他特性:UL RECOGNIZED最大转折电压:150 V
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS最大断态直流电压:120 V
JESD-30 代码:R-PDSO-G8通态非重复峰值电流:4 A
元件数量:2端子数量:8
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL触发设备类型:SILICON SURGE PROTECTOR
Base Number Matches:1

TISP3150F3D 数据手册

 浏览型号TISP3150F3D的Datasheet PDF文件第2页浏览型号TISP3150F3D的Datasheet PDF文件第3页浏览型号TISP3150F3D的Datasheet PDF文件第4页浏览型号TISP3150F3D的Datasheet PDF文件第5页浏览型号TISP3150F3D的Datasheet PDF文件第6页浏览型号TISP3150F3D的Datasheet PDF文件第7页 
TISP3125F3, TISP3150F3, TISP3180F3  
*RoHS COMPLIANT  
MEDIUM-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR  
OVERVOLTAGE PROTECTORS  
TISP31xxF3 (MV) Overvoltage Protector Series  
Ion-Implanted Breakdown Region  
Precise and Stable Voltage  
D Package (Top View)  
Low Voltage Overshoot under Surge  
G
G
G
G
T
NC  
NC  
R
1
8
7
6
5
V
V
(BO)  
DRM  
2
DEVICE  
V
V
3
4
‘3125F3  
‘3150F3  
‘3180F3  
100  
120  
145  
125  
150  
180  
NC - No internal connection  
Planar Passivated Junctions  
Low Off-State Current <10 µA  
SL Package (Top View)  
Rated for International Surge Wave Shapes  
1
2
3
T
G
R
I
TSP  
A
Waveshape  
Standard  
2/10 µs  
8/20 µs  
GR-1089-CORE  
IEC 61000-4-5  
FCC Part 68  
175  
120  
60  
MD1XAB  
10/160 µs  
Device Symbol  
ITU-T K.20/21  
FCC Part 68  
10/700 µs  
50  
T
R
10/560 µs  
FCC Part 68  
45  
35  
10/1000 µs  
GR-1089-CORE  
............................................... UL Recognized Component  
Description  
SD3XAA  
G
These medium-voltage dual bidirectional thyristor protectors are  
designed to protect ground backed ringing central office, access  
and customer premise equipment against overvoltages caused  
by lightning and a.c. power disturbances. Offered in three  
voltage variants to meet battery and protection requirements,  
they are guaranteed to suppress and withstand the listed  
Terminals T, R and G correspond to the  
alternative line designators of A, B and C  
international lightning surges in both polarities. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover  
level, which causes the device to switch. The high crowbar holding current prevents d.c. latchup as the current subsides.  
These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are  
virtually transparent to the system in normal operation.  
How To Order  
Order As  
Device  
Package  
Carrier  
Tape And Reeled  
Tube  
D, Small-outline  
SL, Single-in-line  
TISP31xxF3DR-S  
TISP31xxF3SL-S  
TISP31xxF3  
Insert 1xx value corresponding to protection voltages of 125, 150 and 180  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
MARCH 1994 - REVISED JANUARY 2007  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  

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