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TIP136 PDF预览

TIP136

更新时间: 2024-11-04 02:54:23
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CDIL /
页数 文件大小 规格书
3页 332K
描述
PLASTIC POWER TRANSISTORS

TIP136 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Contact Manufacturer零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.45
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):8 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):1000
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):70 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

TIP136 数据手册

 浏览型号TIP136的Datasheet PDF文件第2页浏览型号TIP136的Datasheet PDF文件第3页 
Continental Device India Limited  
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company  
PLASTIC POWER TRANSISTORS  
TIP130 TIP135  
TIP131 TIP136  
TIP132 TIP137  
NPN  
PNP  
TO-220  
Plastic Package  
Intended for use in Linear and Switching Applications  
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)  
TIP130/135  
TIP131/136  
TIP132/137  
100  
DESCRIPTION  
SYMBOL  
UNIT  
VCEO  
60  
60  
80  
Collector Emitter Voltage  
V
VCBO  
VEBO  
IC  
80  
5.0  
8.0  
12  
100  
Collector Base Voltage  
Emitter Base Voltage  
V
V
Collector Current Continuous  
Collector Current Peak  
Base Current  
A
ICM  
IB  
A
0.3  
70  
A
Power Dissipation upto Tc=25ºC  
Power Dissipation upto Ta=25ºC  
PD  
W
W
PD  
2.0  
16  
Derate above 25ºC  
Operating And Storage Junction  
Temperature  
mW/ºC  
Tj , Tstg  
- 65 to +150  
ºC  
THERMAL RESISTANCE  
Junction to Case  
Rth (j-c)  
Rth (j-a)  
1.78  
62.5  
ºC/W  
ºC/W  
Junction to Ambient in free air  
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)  
MIN  
MAX  
0.5  
DESCRIPTION  
SYMBOL  
ICEO  
TEST CONDITION  
VCE= Half Rated VCEO  
VCB= Rated VCBO  
VEB=5V, IC=0  
UNIT  
mA  
mA  
mA  
V
Collector Cut off Current  
Collector Cut off Current  
Emitter Cut off Current  
Collector Emitter (sus) Voltage  
ICBO  
0.2  
IEBO  
5.0  
*VCEO(sus)  
IC=30mA, IB=0  
TIP130/135  
60  
80  
TIP131/136  
TIP132/137  
V
100  
V
*VCE (sat)  
IC=4A, IB=16mA  
2.0  
3.0  
2.5  
V
Collector Emitter Saturation  
Voltage  
IC=6A, IB=30mA  
IC=4A, VCE=4V  
IC=1A, VCE=4V  
IC=4A, VCE=4V  
V
*VBE(on)  
*hFE  
Base Emitter on Voltage  
DC Current Gain  
V
500  
1,000  
15,000  
*Pulse Test : Pulse width<300ms, Duty Cycle <2%  
Data Sheet  
Page 1 of 3  
Continental Device India Limited  

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