Datasheet > TIP140

TIP140

更新时间： 2024-11-04 05:55:27

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	107K
描述
isc Silicon NPN Darlington Power Transistor

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TIP140 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

TIP140

DESCRIPTION

·High DC Current Gain-

: h_FE= 1000(Min)@ I_C= 5A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 60V(Min)

·Complement to Type TIP145

APPLICATIONS

·Designed for general purpose amplifier and low

frequency switching applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

Collector Current-Continuous

Collector Current-Peak

Base Current- Continuous

I_CM

I_B

0.5

Collector Power Dissipation

@T_C=25℃

P_C

125

150

-65~150

℃

T_j

Junction Temperature

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

1.0

℃/W

35.7 ℃/W

Thermal Resistance, Junction to Case

Thermal Resistance,Junction to Ambient

R_{th j-c}

R_{th j-a}

isc Website：www.iscsemi.cn

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TIP140NPN	CDIL	获取价格	SILICON PLANAR DARLINGTON POWER TRANSISTORS
TIP140P	NJSEMI	获取价格	Trans Darlington NPN 60V 10A 3-Pin(3+Tab) TO-218 Box
TIP140T	CENTRAL	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP140T	SEMIHOW	获取价格	Monolithic Construction With Built In Base-Emitter Shunt Resistors