Datasheet > TIP140

TIP140

更新时间： 2024-11-04 05:55:27

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
4页	166K
描述
Silicon NPN Darlington Power Transistors

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TIP140 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Darlington Power Transistors

TIP140/141/142

DESCRIPTION

·With TO-3PN package

·DARLINGTON

·High DC current gain

·Complement to type TIP145/146/147

APPLICATIONS

·Designed for general–purpose amplifier and

low frequency switching applications.

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

ABSOLUTE MAXIMUM RATINGS(Tc=25ꢀ )

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

TIP140

TIP141

TIP142

TIP140

TIP141

TIP142

V_CBO

Collector-base voltage

Open emitter

100

V_CEO

Collector-emitter voltage

Open base

100

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current-DC

Collector current-Pulse

Base current-DC

Open collector

ꢀ

0.5

P_C

T_j

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

125

150

-65~150

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

1.0

UNIT

ꢀ/W

R_{th j-c}

R_{th j-A}

Thermal resistance junction to case

Thermal resistance case to ambient

35.7

12 3 4

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与TIP140相关器件

型号	品牌	获取价格	描述	数据表
TIP140_05	ONSEMI	获取价格	Darlington Complementary Silicon Power Transistors
TIP140F	TRSYS	获取价格	SILICON PLANAR DARLINGTON POWER TRANSISTORS
TIP140F	FAIRCHILD	获取价格	Monolithic Construction With Built In Base- Emitter Shunt Resistors
TIP140F	CDIL	获取价格	TO-3P Fully Isolated Plastic Package Transistor CDIL
TIP140G	ONSEMI	获取价格	Darlington Complementary Silicon Power Transistors
TIP140LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic
TIP140NPN	CDIL	获取价格	SILICON PLANAR DARLINGTON POWER TRANSISTORS
TIP140P	NJSEMI	获取价格	Trans Darlington NPN 60V 10A 3-Pin(3+Tab) TO-218 Box
TIP140T	CENTRAL	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP140T	SEMIHOW	获取价格	Monolithic Construction With Built In Base-Emitter Shunt Resistors