是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | HTS代码: | 8541.29.00.95 |
风险等级: | 5.27 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 8 A |
配置: | DARLINGTON | 最小直流电流增益 (hFE): | 200 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 265 | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 80 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | MATTE TIN | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TIP106_10 | SEMIHOW |
获取价格 |
Monolithic Construction With Built In Base-Emitter Shunt Resistors | |
TIP10616 | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti | |
TIP106A | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti | |
TIP106AF | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti | |
TIP106AJ | MOTOROLA |
获取价格 |
8A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB | |
TIP106-B | MCC |
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Transistor | |
TIP106-BP | MCC |
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Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti | |
TIP106C | MOTOROLA |
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Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti | |
TIP106D1 | MOTOROLA |
获取价格 |
8A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB | |
TIP106G | ONSEMI |
获取价格 |
Plastic Medium−Power Complementary Silicon Transistors |