M C C
TIP100
TIP101
TIP102
TM
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
Micro Commercial Components
Features
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
•
RoHS Compliant. See ordering information)
•
•
•
High DC Current Gain : hFE=2500 (Typ) @ IC=4.0Adc
NPN Plastic
Medium-Power
Silicon Transistors
Low Collector-Emitter Saturation Voltage
Monolithic Construction with Built-in Base-Emitter Shunt Resistors
TO-220 Compact package
Epoxy meets UL 94 V-0 flammability rating
•
·
·
Moisure Sensitivity Level 1
Maximum Ratings
Symbol
VCEO
Parameter
Rating
60
80
100
Unit
Collector-Emitter Voltage
Collector-Base Voltage
TO-220
TIP100
TIP101
TIP102
TIP100
TIP101
TIP102
V
V
C
B
S
F
VCBO
60
80
100
Q
VEBO
IC
ICP
IB
Emitter-Base Voltage
Collector Current-continuous
Collector Current-peak
Base Current
5.0
8.0
15
1.0
V
A
A
T
A
A
U
Collector Dissipation @TC=25OC
80
0.64
-55 to +150
-55 to +150
W
1
2
3
PD
Derate above 25 OC
Junction Temperature
Storage Temperature
W/ OC
OC
TJ,
TSTG
H
OC
K
O
Electrical Characteristics @ 25 C Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V
VCEO(SUS)
Collector-Emitter Sustaining Voltage
L
J
(IC=30mAdc, IB=0)
TIP100
60
80
100
---
---
---
D
TIP101
TIP101
Vdc
R
G
N
ICEO
Collector Cut-off Current
(VCE=30Vdc, IB=0)
(VCE=40Vdc, IB=0)
TIP100
TIP101
TIP102
---
---
---
50
50
50
PIN 1.
PIN 2.
PIN 3.
BASE
COLLECTOR
EMITTER
uAdc
(VCE=50Vdc, IB=0)
ICBO
Collector Cut-off Current
(VCB=60Vdc, IE=0)
TIP100
TIP101
TIP102
---
---
---
50
50
50
uAdc
mAdc
----
(VCB=80Vdc, IE=0)
(VCB=100Vdc, IE=0)
Emitter Cut-off Current
(VBE=5.0Vdc, IC=0)
IEBO
DIMENSIONS
---
8.0
INCHES
MM
MIN
14.22
9.65
MAX
15.88
10.67
NOTE
DIM
A
MIN
MAX
.625
ON CHARACTERISTICS(1)
.560
.380
.140
hFE(1)
DC Current Gain
(IC=3.0Adc, VCE=4.0Vdc)
(IC=8.0Adc, VCE=4.0Vdc)
B
C
.420
.190
1000
200
20000
---
3.56
4.82
D
F
.020
.139
.190
---
.045
.161
.110
.250
.025
0.51
3.53
2.29
---
1.14
4.09
2.79
6.35
0.64
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=3.0Adc, IB=6.0mAdc)
(IC=8.0Adc, IB=80mAdc)
Base-Emitter On Voltage
(IC=8.0Adc,VCE=4.0Adc)
Small-Signal Current Gain
(IC=3.0Adc,VCE=4.0Vdc,f=1.0MHz)
Output Capacitance
G
H
J
---
---
2.0
2.5
Vdc
Vdc
---
.012
0.30
VBE(ON)
hfe
K
L
.500
.045
.580
.060
12.70
1.14
14.73
1.52
---
4.0
---
2.8
---
N
.190
.210
4.83
5.33
Q
R
S
T
U
V
.100
.080
.045
.230
-----
.135
.115
.055
.270
.050
-----
2.54
2.04
1.14
5.84
-----
3.43
2.92
1.39
6.86
1.27
-----
Cob
(VCB=10V, IE=0, f=0.1MHz)
200
pF
(1) Pulse Test: Pulse Width<300us, Duty Cycle<2%
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
.045
1.15
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Revision: A
2011/01/01