5秒后页面跳转
TIP102W PDF预览

TIP102W

更新时间: 2024-11-01 13:14:39
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
6页 221K
描述
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

TIP102W 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.65
外壳连接:COLLECTOR最大集电极电流 (IC):8 A
集电极-发射极最大电压:100 V配置:DARLINGTON
最小直流电流增益 (hFE):1000JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN功耗环境最大值:80 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzBase Number Matches:1

TIP102W 数据手册

 浏览型号TIP102W的Datasheet PDF文件第2页浏览型号TIP102W的Datasheet PDF文件第3页浏览型号TIP102W的Datasheet PDF文件第4页浏览型号TIP102W的Datasheet PDF文件第5页浏览型号TIP102W的Datasheet PDF文件第6页 
Order this document  
by TIP100/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for general–purpose amplifier and low–speed switching applications.  
High DC Current Gain —  
= 2500 (Typ) @ I = 4.0 Adc  
Collector–Emitter Sustaining Voltage — @ 30 mAdc  
h
FE  
C
V
V
V
= 60 Vdc (Min) — TIP100, TIP105  
= 80 Vdc (Min) — TIP101, TIP106  
= 100 Vdc (Min) — TIP102, TIP107  
CEO(sus)  
CEO(sus)  
CEO(sus)  
Low Collector–Emitter Saturation Voltage —  
V
V
= 2.0 Vdc (Max) @ I = 3.0 Adc  
CE(sat)  
CE(sat)  
C
= 2.5 Vdc (Max) @ I = 8.0 Adc  
C
Monolithic Construction with Built–in Base–Emitter Shunt Resistors  
TO–220AB Compact Package  
*MAXIMUM RATINGS  
*Motorola Preferred Device  
TIP100,  
TIP105  
TIP101,  
TIP106  
TIP102,  
TIP107  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
DARLINGTON  
8 AMPERE  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
6080100 VOLTS  
80 WATTS  
V
CEO  
60  
60  
80  
80  
100  
100  
V
CB  
EB  
V
5.0  
Collector Current — Continuous  
Peak  
I
C
8.0  
15  
Adc  
Adc  
Base Current  
I
B
1.0  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
80  
0.64  
Watts  
W/ C  
Unclamped Inductive Load Energy (1)  
E
30  
mJ  
Total Power Dissipation @ T = 25 C  
A
Derate above 25 C  
P
D
2.0  
0.016  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
R
1.56  
62.5  
θJC  
CASE 221A–06  
TO–220AB  
θJA  
(1) I = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, V  
= 20 V, R = 100 .  
BE  
C
CC  
T
T
C
A
4.0 80  
3.0 60  
2.0 40  
T
C
1.0 20  
T
A
0
0
0
20  
40  
60  
80  
100  
C)  
120  
140  
160  
T, TEMPERATURE (  
°
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 7  
Motorola, Inc. 1995

与TIP102W相关器件

型号 品牌 获取价格 描述 数据表
TIP102WD MOTOROLA

获取价格

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP105 TRSYS

获取价格

PNP SILICON POWER DARLINGTONS
TIP105 SAMSUNG

获取价格

PNP (HIGH DC CURRENT GAIN MIN
TIP105 FAIRCHILD

获取价格

Monolithic Construction With Built In Base- Emitter Shunt Resistors
TIP105 STMICROELECTRONICS

获取价格

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
TIP105 MOTOROLA

获取价格

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
TIP105 MCC

获取价格

PNP Plastic Medium-Power Silicon Transistors
TIP105 TAITRON

获取价格

Darlington Power Transistors (PNP)
TIP105 CDIL

获取价格

PLASTIC POWER TRANSISTORS
TIP105 ONSEMI

获取价格

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS