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TIC225N

更新时间： 2024-01-08 23:48:45
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页数 文件大小 规格书
6页 153K
描述
SILICON TRIACS

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TIC225N 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SFM包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：unknown
HTS代码：8541.30.00.80风险等级：5.73
Is Samacsys：N其他特性：SENSITIVE GATE
外壳连接：MAIN TERMINAL 2配置：SINGLE
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大均方根通态电流：8 A
断态重复峰值电压：700 V表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED触发设备类型：4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches：1

TIC225N 数据手册

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TIC225 SERIES  
SILICON TRIACS  
Copyright © 1997, Power Innovations Limited, UK  
JULY 1975 - REVISED MARCH 1997  
●
●
●
●
●
Sensitive Gate Triacs  
TO-220 PACKAGE  
8 A RMS, 70 A Peak  
(TOP VIEW)  
Glass Passivated Wafer  
400 V to 800 V Off-State Voltage  
MT1  
MT2  
G
1
2
3
Max I of 5 mA (Quadrant 1)  
GT  
Pin 2 is in electrical contact with the mounting base.  
MDC2ACA  
absolute maximum ratings over operating case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
TIC225D  
TIC225M  
TIC225S  
TIC225N  
400  
600  
Repetitive peak off-state voltage (see Note 1)  
VDRM  
V
700  
800  
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)  
Peak on-state surge current full-sine-wave (see Note 3)  
Peak on-state surge current half-sine-wave (see Note 4)  
Peak gate current  
IT(RMS)  
ITSM  
ITSM  
IGM  
8
A
A
70  
80  
A
±1  
A
Peak gate power dissipation at (or below) 85°C case temperature (pulse width £ 200 ms)  
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)  
Operating case temperature range  
PGM  
PG(AV)  
TC  
2.2  
W
W
°C  
°C  
°C  
0.9  
-40 to +110  
-40 to +125  
230  
Storage temperature range  
Tstg  
Lead temperature 1.6 mm from case for 10 seconds  
TL  
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.  
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at  
the rate of 200 mA/°C.  
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.  
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.  
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.  
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.  
5. This value applies for a maximum averaging time of 20 ms.  
electrical characteristics at 25°C case temperature (unless otherwise noted)  
MIN  
TYP  
MAX  
PARAMETER  
TEST CONDITIONS  
UNIT  
Repetitive peak  
off-state current  
IDRM  
VD = rated VDRM  
supply = +12 V†  
IG = 0  
TC = 110°C  
±2  
mA  
V
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
tp(g) > 20 ms  
tp(g) > 20 ms  
tp(g) > 20 ms  
tp(g) > 20 ms  
tp(g) > 20 ms  
tp(g) > 20 ms  
tp(g) > 20 ms  
tp(g) > 20 ms  
0.8  
-4.5  
-3.5  
11.7  
0.7  
5
-20  
-10  
30  
2
Peak gate trigger  
current  
Vsupply = +12 V†  
Vsupply = -12 V†  
Vsupply = -12 V†  
IGTM  
mA  
V
Vsupply = +12 V†  
Peak gate trigger  
voltage  
Vsupply = +12 V†  
Vsupply = -12 V†  
Vsupply = -12 V†  
-0.7  
-0.8  
0.9  
-2  
VGTM  
-2  
2
† All voltages are with respect to Main Terminal 1.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1
123456

中文翻译

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